2SA1235-E

2SA1235_15 KEXIN

Document overview

• Manufacturer or author: Provided By digicamel.com
• PDF pages: 3

Technical content

Features

Small collector to emitter saturation voltage. Excelent lineary DC forward current gain. Super mini package for easy mounting. Absolute Maximum Ratings Ta = 25 tinUgnitaRlobmySretemaraP Vegatlovesab-rotcelloC CBO -50 V Vegatlovrettime-rotcelloC CEO -50 V Vegatlovesab-rettimE EBO -6 V ItnerrucrotcelloC C -200 mA Collector dissipation (Ta=25 ) PC 200 mW TerutarepmetnoitcmuJ j 125 TerutarepmetegarotS stg -55 to +125 Electrical Characteristics Ta = 25 PNP Transistors 2SA1235 Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -50 Collector- emitter breakdown voltage VCEO IC= -1 mA， IB =0 -50 Emitter - base breakdown voltage VEBO IE= -100μA，IC=0 -6 Collector-base cut-off current ICBO VCB= -50 V , IE=0 -0.1 Emitter cut-off current IEBO VEB= -6V , IC=0 -0.1 Collector-emitter saturation voltage VCE(sat) IC=-100 mA, IB=-10mA -0.3 Base-emitter saturation voltage VBE(sat) IC=-100 mA, IB=-10mA -1.2 VCE= -6V, IC= -1mA 150 800 VCE= -6V, IC= -0.1mA 90 Noise figure NF VCB= -6V, IE= 0.3mA,f=100 Hz,RG=10kΩ 20 dB Collector output capacitance Cob VCB= -6V, IE= 0,f=1MHz 4 pF Transition frequency fT VCE= -6V, IE= -10mA 200 MHz V uA V DC forward current gain hFE ■ Classification of hfe(1) Type 2SA1235-E 2SA1235-F 2SA1235-G Range 150-300 250-500 400-800 Marking ME MF MG 0.4+0.1 -0.1 2.9+0.1 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.1 2.4+0.1 -0.1 1.3+0.1 -0.1 0-0.1 0.38+0.1 -0.1 0.97+0.1 -0.1 0.55 0.4 1.Base 2.Emitter 3.collector 1 2 Unit: mmSOT-23 0.1+0.05 -0.01

www.kexin.com.cn2 Transistors PNP Transistors 2SA1235 ■ Typical Characterisitics COLLECTOR DISSIPATION VS.AMBIENT TEMPERTURE 100 150 200 250 0 25 50 75 100 125 150 AMBIENT TEMPERTURE Ta (℃) COLLECTOR DISSIPATION Pc (mW) COMMON EMITTER OUTPUT IB=0 0.02mA 0.04mA 0.06mA 0.08mA 0.10mA 0.12mA 0.14mA 0.16mA 0.18mA -10 -20 -30 -40 -50 -0 -1 -2 -3 -4 -5 COLLECTOR EMITTER VOLTAGE VCE(V) COLLECTOR CURRENT IC(mA) Ta=25℃ COMMON EMITTER TRANSFER -10 -20 -30 -40 -50 BASE TO EMITTER VOLTAGE VBE(V) COLLECTOR CURRENT IC(mA) Ta=25℃ VCE=-6V DC FORWARD CURRENT GAIN VS. COLLECTOR CURRENT 100 1000 10000 COLLECTOR CURRENT IC(mA) RELATIVE VALUE OF DC FORWARD CURRENT GAIN hFE Ta=25℃ VCE=-6V 100(@IC=-1mA) GAIN BAND WIDTH PRODUCT VS. EMITTER CURRENT 100 150 200 250 0.1 1 10 100 EMITTER CURRENT IE(mA) GAIN BAND WIDTH PRODUCT fT(MHz) Ta=25℃ VCE=-6V COLLECTOR OUTPUT CAPACITANCE VS. COLLECTOR TO BASE VOLTAGE 0.1 100 -0.1 -1 -10 -100 COLLECTOR TO BASE VOLTAGE VCB(V) COLLECTOR OUTPUT CAPACITANCE Cob(pF) Ta=25℃ IE=0 f=1MHz

www.kexin.com.cn 3 Transistors PNP Transistors 2SA1235 ■ Typical Characterisitics