2SA1226 NEC
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| / NEC | SILICON TRANSISTOR gfscon neve / 2SA1226 | HIGH FREQUENCY AMPLIFIER | PNP SILICON EPITAXIAL TRANSISTOR | MINI MOLD 7 7 FEATURES | PACKAGE DIMENSIONS in millimeters © High Gain Bandwidth product fy =400 MHz TYP. 3 2840.2 I © Low Output Capacitance Cop = 1.1 pF TYP. 39 15 0.65 *85 | © Low Noise, NF =3.5 dB TYP. (f = 1.0 MHz) $ | j 2 al & = ' ABSOLUTE MAXIMUM RATINGS 3} mt i ° x 1B {| Maximum Voltages and Current (Ta =25 °C) “Bly | 3 3 H Collector to Base Voltage (Rge = °°) Veso —40 Vv Ef | $| Collector to Emitter Voltage (Open Base) Voeo -40 Vv | Emitter to Base Voltage VeBo —5.0 v ° Marking Collector Current (DC) Ie ~30 mA | i 8 Maximum Power Dissipation 2 i | Total Power Dissipation | @ 4 3 | at 25 °C Ambient Temperature Py 200 mw = \\ Maximum Temperatures 1. Emitter 3 i Junction Temperature TZ 150 sc 2. Base L i -|
3 Coctor él | Storage Temperature Range Tstg 55 to +150 c
ELECTRICAL CHARACTERISTICS (T, = 25 °C) @ [_aracreniene | evmeoe [wm ive [ wax [own] resreowormons——] | eatecorutorrcurent | icgo ||| | ewe | oe | [eset EniverVowe | Yee | 087 | oz [| V | Vog=-t0viic==10ma | | [in Boao rower | fr | a8) | 400 || wi | Vcee=t0Wie=1ma | | | ouutcapecirce | ep | | ta | 28 | oF | Veer —t0vitero.totomme | | | VcE=—10 V, Ic=—1.0 mA | Rg =500 2, f= 1.0 MHz hee Classification @ re [een [wee [oni | | NEC bility f ireuits sh r that . they are free from patent infringement. nn NEC Corporation . © 1984 NEC Corporation
TYPICAL CHARACTERISTICS (T, =25 °C) | TOTAL POWER DISSIPATION vs. COLLECTOR CURRENT vs. @ AMBIENT TEMPERATURE COLLECTOR TO EMITTER VOLTAGE . PT Lt te | “ Hee eae eae Woe = — | = 200 - | i LT rT = g t a ae 3 150 N z 6 Wiad g NX & ye Cio ptt INT | 3 epee ee £19 SS IPeetees LE 3 | oo ——S = z IN & Poe | TTT | <8 | e* . 2 Week TTT N\\ Fo ee TTT a Cri teTT TTT q Ta—Ambient Temperature—°C ° —4 8 =12 —16 20 oo | VceE—Collector to Emitter Voltage—V | coLLecton cunneNt ve couuecton cunnent w=, | COLLECTOR TO EMITTER VOLTAGE BASE TO EMITTER VOLTAGE md > 7100 EEE | BER Sap ESSSSSSaakoae : Sf, —— ~ 80 / = | | VY rT |i EERE Ere ee | “4 | NM WW -_—-. eof LET] | ; Yor rae DEADEOOTAEROEE @ man = Fok pL B -3 WA sop 3 | | | Y/ | | | | 5 SPP rr rr rary rrr
3 WZ = 3 He
al eee 3 -20 HTH aan | an) ,62 see oe ne (Zee ~o3 EEE EE EERE | pa woe LL PEE | | LA et TT TT vot LTT TT) eo VceE—Collector to Emitter Voltage—V. VBE~Base to Emitter Voltage—V | BASE AND COLLECTOR SATURATION VOLTAGE eter i oe vs. COLLECTOR CURRENT P (2 ES ae oe | 8 ES = Af Boe TT) 8, EHH ° SSS SSS SSSt tS SEE: sz 8 oe ge LT Be ec 33 ES ey i === = 2 ooo g 8 -oos| —-F Neeaer ra #3 °° a ee em BSL LLM TTI | 'c—-Colector Current—mA 88 001 02 —05-10-20 -5.0 -10-20 -—50-100 I¢—Collector Current—mA 2 | ee
@ GAIN BANDWIDTH PRODUCTS vs. OUTPUT CAPACITANCE vs. EMITTER CURRENT COLLECTOR TO BASE VOLTAGE | py 8000 Ft eV | = poop | . goo TT ee 3 roo ¢ of I TTT 2 500. — eH s* a ar oO g a SH OH | a +4 2 opt TE i —— eee!
3 CTT 3 — ee oe oe es ee
' & 3 a SS OS OS | 100 fH 3 os r © SS SSS See: ° a a OO 8 80 e fC omr eei 1 eS SH A | Ss £ of fi Fe | woL_| LIMIT TTT} i 1.0 20 5.0 10 20 50 100 01 ry le—Emitter Current — mA -10 -20 -5.0 -10 —20 =50 —100 Vcp—Collector to Base Voltage—V INPUT CAPACITANCE vs. EMITTER TO BASE VOLTAGE 0D ——— rr Ic =0 aS ae | soph —_1 fF Pr " tH @ tot Coo & 20 ooo oe 8 10 Bell
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= a = o_o eee “ [i @ Ooooh Pe a ®@ ot a lil Vep—Emitter to Base Voltage—V
é eee NEC Corporation INTERNATIONAL ELECTRON DEVICES Div. SUMITOMO MITA Building, 37-8, e@ | Shiba Gochome, Minato-ku, Tokyo 108, Japan Tel: Tokyo 456-3111 Telex Address: NECTOK J22686 Cable Address: NEC TOKYO | TC—1480A, | AUG.—31—84M | Printed in Japan |