2SA1200 TOSHIBA
Document overview
- Manufacturer or author: Provided By digicamel.com
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Technical content
TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) HIGH VOLTAGE SWITCHING APPLICATIONS Unit in mm A.gMAX 1EMAX. e High Voltage : Voro=—150V 1 7MAX. 0.40.05, © High Transition Frequency : fp=120MHz (Typ.) J Fe ¢@ PcC=1~2W (Mounted on Ceramic Substrate) a 8 z @ Small Flat Package oa *8.88l é © Complementary to 2SC2880 902988 | +908 15404 1540.1 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL +23 Collector-Base Voltage VcBo ‘ollector-Emitter Voltage VCEO 50 Vv 1 BASE on Emitter-Base Voltage VERO concern Collector Current PONENT __ 3: EMITTER JEDEC = Collector Power Dissipation EIAT SC-62 Collector Power Dissipation TOSHIBA 2-5K1A Type Name Po* : 2SA1200 mounted on ceramic substrate (250mm? X 0.8t) ao hyp Rank | 0} ELECTRICAL CHARACTERISTICS (Ta = 25°C) uuu CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current Iepo—|Vop=—150V, Ip=0 | — | — ]-o1] pa] [Bmitter Cutoff Current | topo [Ven=-svito=o | — | — [04 | a | i hFE = = DC Current Gain (Note) VcE=—5V, Ic=—-10mA 70 b= | wo] | Collector-Emitter Saturation Voltage [vor nn [ic -s0mAtp=—ima | — | — |-o8| v | Base-Emitter Voltage Von= —5V, Io=—30mA [ — | — f-o9| v | Collector Output Capacitance VCE=—10V, In=0, f=1MHz [| — | 40 | 50] pr | Note : hyp Classification O:70~140, Y : 120~240 Q61001EAA2 malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your, designs, please ensure that TOSHIBA. products are, used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook 1996-11-11 1/3
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= 20 Le B sti | Titi i nt WA a 2 UI OI h /@Gneneeenee UME EERIE 1A eA ff @tLttEtT tt tt tel | 0) =2 46 -8 -10 —12 COLLECTOR CURRENT Ig (mA) COLLECTOR-EMITTER VOLTAGE Vcg (V)
5 VCE (sat) — IC
es | ij em / i “trill ees £ TL WL £ = 2, iL LI AAI ee anni PalirN | [iT S2 ” GRR Sa A : Bs allies <A 20ll 8 ott GS-0 Ree eet 8 <a ee |
1 Te Se
COLLECTOR CURRENT Ic (mA) COLLECTOR CURRENT I¢ (mA)
5 VCE (sat) — IC +0 Ic — VBE
i T_T Tt 7) 7 | goon ears Fa . common | TT [TT] | | | Z | tortg=10 er 2 _ joes IAI Ui TU i 2 “CTA Pp LY, s 28 -osttt te 2 Lit tT yyy yt E> -oaf HIT TTT Oe 2 P| ttt Poy Zs" Hi eet z a ime Co zs (ML 0 Beet | | sa ae a =, Sass | Ba - 2 a (iia Satire iia oe 5 ae eH (ve COLLECTOR CURRENT Ic (mA) BASE-EMITTER VOLTAGE Vpg (V)
961001 EAA2"
@ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA. CSOs acy peti FURIES oy cea ars sake Be Se Ua UREN) acs Re Su We Renee by implication or otherwise under any intellectual Broperty ‘or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1996-11-11 2/3
SAFE OPERATING AREA Pc - Ta 200; 1200 zegecmmese™ | TUITE] g FEE fo sontem ox crane $ -100 - so S root TT I SUBSTRATE (250mm?x0.8t) © Fed vous fo z TTT 6 xo Hear sin 5 = N NIN es COON TTT g MIIIN UI N Sot LUT NUTIN 2 COOSA & SS g OTT ANCEN EET So 3 aa i) NS CURVES MUST BE DERATED SS IN TEMPERATURE Von MAX. | | 0 20 40 60 80 100 120 140 ©6160 aeary 3 7 rT) 10) 2300 AMBIENT TEMPERATURE Ta (*C) COLLECTOR-EMITTER VOLTAGE VcE (V) TTT SB