2SA1179N_12 SANYO

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 7

Technical content

Features

  • Miniature package facilitates miniaturization in end products
  • High breakdown voltage Specifi cations ( ) : 2SA1179N Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V CBO (- -)55 V Collector-to-Emitter Voltage V CEO (- -)50 V Emitter-to-Base Voltage V EBO (- -)5 V Collector Current I C (- -)150 mA Collector Current (Pulse) I CP (- -)300 mA Base Current I B (- -)30 mA Collector Dissipation P C 200 mW Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C Package Dimensions unit : mm (typ) 7053-001

91912 TKIM/92006 MSIM TC-00000143,00000144/72602 TSIM TA-2636, 2637

http://www.sanyosemi.com/en/network/ Product & Package Information

  • Package : CPA
  • JEITA, JEDEC : SC-59, TO-236, SOT-23, TO-236AB Minimum Packing Quantity : 3,000 pcs./reel Packing Type: TB Marking TB 1 : Base 2 : Emitter 3 : Collector SANYO : CP A 2.93 1.9 0.95 0.45

1.3 MAX

0.13 0 to 0.1 1.0 1.3 2.4 0.55 0.55

0.2 MIN

M LOT No. LOT No. L LOT No. LOT No. 2SC2812N2SA1179N 2SA1179N6-TB-E 2SA1179N6-CPA-TB-E 2SC2812N6-TB-E 2SC2812N6-CPA-TB-E 2SA1179N/2SC2812N PNP / NPN Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose Amp Applications

No.7198-2/7 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Collector Cutoff Current I CBO VCB=(- -)35V, IE=0A (- -)0.1 μA Emitter Cutoff Current I EBO VEB=(- -)4V, IC=0A (- -)0.1 μA DC Current Gain h FE VCE=(- -)6V, IC=(- -)1mA 200 400 Gain-Bandwidth Product f T 2SC2812N : VCE=6V, IC=1mA 100 MHz 2SA1179N : VCE=- -6V, IC=- -10mA (180) MHz Output Capacitance Cob V CB=(- -)6V, f=1MHz (4.0)3.0 pF Collector-to-Emitter Saturation Voltage V CE(sat) I C=(- -)50mA, IB=(- -)5mA (- -0.15)0.1 (- -)0.5 V Base-to-Emitter Saturation Voltage V BE(sat) I C=(- -)50mA, IB=(- -)5mA (- -)1.0 V Collector-to-Base Breakdown Voltage V (BR)CBO IC=(- -)10μA, IE=0A (- -)55 V Collector-to-Emitter Breakdown Voltage V (BR)CEO IC=(- -)1mA, RBE=∞ (- -)50 V Emitter-to-Base Breakdown Voltage V (BR)EBO IE=(- -)10μA, IC=0A (- -)5 V * : The 2SA1179N / 2SC2812N are classifi ed by 1mA hFE as follws : Rank 6 hFE 200 to 400

Ordering Information

Device Package Shipping memo 2SA1179N6-TB-E CPA 3,000pcs./reel Pb Free 2SA1179N6-CPA-TB-E CPA 3,000pcs./reel 2SC2812N6-TB-E CPA 3,000pcs./reel 2SC2812N6-CPA-TB-E CPA 3,000pcs./reel IT04195 --4 --12 --8 --16 --80 --40 --120 --200 --160 --240 IT04197 IT04196 0 1 02 03 04 05 0 IT04198 120 160 200 240 IB=0μA --5μA --10μA --15μA --20μA --25μA --30μA --35μA--40μA--45μA--50μA 2SA1179N 2SA1179N VCE= --6V 2SC2812N VCE=6V IB=0μA5μA 10μA 15μA 20μA 25μA 30μA 35μA 40μA 45μA 50μA 2SC2812N Ta=75 --25 Ta=75 --25 IC -- VCE Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- mA IC -- VBE Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- mA IC -- VCE Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- mA Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- mA IC -- VBE

No.7198-3/7 IT04205 --1.0 --1023 5 7 --10023 5 7 23 5 --0.1 IT04203 23 5 757 2 3 57 --10 --100--1.0 1.0 2SA1179N f=1MHz IT04204 23 5 757 2 3 57 10 1001.0 1.0 2SC2812N f=1MHz IT04206 1.0 10 23 5 7 10023 5 7 23 5 0.1 0.01 2SA1179N IC / IB= --10 2SC2812N IC / IB=10 Collector Current, IC -- mA VCE(sat) -- IC Collector-to-Emitter Saturation V oltage, VCE(sat) -- V Collector-to-Emitter Saturation V oltage, VCE(sat) -- V Collector-to-Base V oltage, VCB -- V Output Capacitance, Cob -- pF Collector Current, IC -- mA VCE(sat) -- IC Collector-to-Base V oltage, VCB -- V Cob -- VCBCob -- VCB Output Capacitance, Cob -- pF 100 IT04201 IT04199 1000 100 2SA1179N VCE= --6V 2SA1179N VCE= --6V Ta=75°C --25°C 25°C IT04200 57320.1 57321.0 573210 32100 1000 100 2SC2812N VCE=6V Ta=75°C --25°C 25°C 57231.0 572310 23100 100 IT04202 2SC2812N VCE=6V Gain-Bandwidth Product, fT -- MHz fT -- IC f T -- IC Collector Current, IC -- mA Gain-Bandwidth Product, fT -- MHz Collector Current, IC -- mA DC Current Gain, hFE hFE -- IC Collector Current, IC -- mACollector Current, IC -- mA DC Current Gain, hFE hFE -- IC

No.7198-4/7 IT04207 0.1 23 5 7 1.0 23 5 7 10 23 5 7 100 0.01 0.001 IT04208 0 20 40 60 80 100 120 140 160 100 150 200 250 0.1 DC operation ICP=0.3A IC=0.15A 100μs 10μs 1ms10ms 100ms Ta=25°C Mounted on a glass epoxy board (20✕30✕1.6mm) For PNP, the minus sign is omitted. Collector-to-Emitter V oltage, VCE -- V A S O Collector Current, IC -- A Ambient Temperature, Ta -- °C PC -- Ta Collector Dissipation, PC -- mW

No.7198-5/7 Embossed Taping Specifi cation 2SA1179N6-TB-E, 2SA1179N6-CPA-TB-E, 2SC2812N6-TB-E, 2SC2812N6-CPA-TB-E

No.7198-6/7 Outline Drawing Land Pattern Example 2SA1179N6-TB-E, 2SA1179N6-CPA-TB-E, 2SC2812N6-TB-E, 2SC2812N6-CPA-TB-E Mass (g) Unit 0.013 * For reference mm Unit: mm 0.950.95 1.0 2.4 0.8

PS No.7198-7/7 This catalog provides information as of September, 2012. Specifi cations and information herein are subject to change without notice. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer 's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer 's products or equipment. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a confirmation. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.