2SA1175 NEC
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Technical content
/ 2SA1175 — TTT DESCRIPTION The 2SA1175 is designed for use in driver stage of AF amplifier. PACKAGE DIMENSIONS in millimeters (inches) FEATURES © High hee and excellent linearity : 200 TYP. (o@smax) (0086 Max.) hee (Ic =-1.0 mA) 6 aie) © Complementary to the NEC 2SC2785 NPN transistor. Lo] Lis! Ee) an re 38 ABSOLUTE MAXIMUM RATINGS I 04s oa Maximum Temperatures tors) fico) = ° 3 Maximum Power Dissipation (Ta = 25 °C) Maximum Voltages and Currents (Ta = 25 °C) ELECTRICAL CHARACTERISTICS (Ta = 25 °C) SYMBOL CHARACTERISTIC MIN. TYP. MAX. UNIT TEST CONDITIONS hee DC Current Gain 110 200 600 - VcE=-6.0 V, Ic=-1.0 mA NF Noise Figure 6.0 20 dB VcE=-6.0 V, Ic=-0.3 mA, Rg=10 k2, f=100 Hz ft Gain Bandwidth Product 50 180 MHz VcE=-6.0 V, IE=-1.0mA Cob Output Capacitance 45 6.0 pF Vog=-10 V, IE=0, f=1.0 MHz tego Collector Cutoff Current 0.1 uA Vcpg=—60 V, 1E=0 lEBO Emitter Cutoff Current 0.1 uA Vep=—5.0 V, Ic=0 VBE Base to Emitter Voltage -058 -062 -068 v VcE=-6.0 V, Ic=—1.0 mA ) VcE(sat) Collector Saturation Voltage 0.18 03 v I¢=—100 mA, Ig=—10 mA | Classification of hee | a | he Test Conditions : Vog=-6.0 V, I¢=-1.0 mA SS 139
TYPICAL CHARACTERISTICS (Ta = 25 °C unless otherwise noted) | TORMENT TEMPERATURE OLLESTSR Fo EMtTed vortace SOLtESTOR SoEmirTeA vouTAGE “ “ Zoe “GEE aan Ae (TTP \\| ee ATT TT I eo COE CUO SAS ers Te il NCEE] -» ee ee FCO NCCEEEEE > Ogee : eee eecoopNcorrrr) og. ggg dee 2 of TONE “Gece es ¢ Pee PEON 2 am g2eneenn Eee TTT BCE i“ Peres CEE 2 COON TT ee 22a So}. PeEEEREE gf CON > Watt | ASS © “FEET TTT NY | AR PT eT Cyr itt N | Pe Pritt ti bit ar car mae ae a0 TarAmhlert Temparabae Vce~Caliector to Emitter Voitage-V VceE~Collector to Emitter Vottage—V COLLECTOR CURRENT vs. eSONEETOR CURRENT SARS CUhnent Base TO EMITTER VOLTAGE ra SSS TT ed Sees eee en ecii ese ee tee eei eet a SSR SS Eee é wo CL ess 2 3 nol SSS =s ell . FR a yea ee ier ieee ss 7) meee 2° SSS Eas 9 Rea) SSS ° ESE oo 8 yes go : ESS EER * * 8 LOT L oe | SCLIN SLEPT TTI) > oh aaa el UN tte meee ee, See le—Coteetor Cre mA \\gColector Curent mA ° "FERRE “LILI TTT SOtrRGen. COLLECTOR CURRENT. GANPANACORRENT QvREVERSE VOLTAGE | 19 —— ~209) a a OO SSS owe | > | Mo dee |] Eee =e So aoe wot ITI eee fe ae | ge ——<s.et oo see 3 | a i of I | 5 EER 3 Lert | ern oe b HH 5 ses oe ct eects ae LT | cl) 3 “ee a ae i a3 Se) et t a a | 3 soo gp osetia) © LLIN Tip CLT 33 - 2 | ge Coo , etme Core Liptay 50 1 = 100 | ** el LT TT Tl VopCotecter to Base Vatage—v 140
NEC 2SA1175 | (EMITTER CURRENT COLLECTOR TO EMITTER VOLTAGE NOISE FIGURE MAP 1
10 E==SINORMAL_h PARAMETERS 100 ===ETRORWAL fh PARANETERS 10 SSRIS SOT]
oe Hice= 60 Vient.0mk t=1.044 f= EHvee= 60 View 1.0 ma t= 1.0 wl 20SEC (= 19 ta] . Peete . Eos , oRERESSGRK i UU el) LT i o SNR NIN See Sl A
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2 ESS He NSE Sate 2 Ee 6 ESR RENTER NS
oat} oan ofS SUL SATE NN NM oaL_LIHM | Tretia oy vo SOUT TN NOISE FIGURE MAP 2 NOISE FIGURE MAP 3 NOISE FIGURE MAP 4 on So Sen cee SRG | Bast Se
7 PENNANT | oA SOT 7 LIU SN
= KSC ANAS TSS é NSOASTTIC EN TTINIASISNS 3 SOS SOTSO SS STN & 20h SOS NAN SAS © 20ST DURAN 20S CUNTIS SNS 2 SSSA DINAN 2 RSENS Lo. SSN OI SS : ORSINI | & oS Si . “RNA xo} RSS SIH 200 BONS ‘200] a JSS EEG vol SOUTAAE CUT ‘oS RU SNE ‘oS PUN ETT] lg~Collector Current mA \\¢—Collector Current mA Ig Collector Current mA 141