2SA1173 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1173
DESCRIPTION
- High Collector-Emitter Breakdown Voltage- : V(BR)CEO=-140V(Min)
- Good Linearity of hFE
- Low Saturation Voltage
APPLICATIONS
- Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -140 V VCEO Collector-Emitter Voltage -140 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -0.05 A PC Collector Power Dissipation @ TC=25℃ 2 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn isc & iscsemi is registered trademark 2 isc Silicon PNP Power Transistor 2SA1173
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= -20mA; IB= -2mA -0.6 V VBE(sat) Base-Emitter Saturation Voltage IC= -20mA; IB= -2mA -1 V ICBO Collector Cutoff Current VCB= -140V; IE= 0 -0.1 μ A IEBO Emitter Cutoff Current VEB= -4V; IC= 0 -1 μ A hFE-1 DC Current Gain IC= -10mA ; VCE= -10V 90 400 fT Current-Gain—Bandwidth Product IC= -10mA ; VCE= -10V 80 MHz COB Output Capacitance IE=0 ; VCB= -10V,ftest= 1MHz 2.5 pF