2SA1171_15 KEXIN
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Low frequency small signal amplifier Absolute Maximum Ratings Ta = 25 tinUgnitaRlobmySretemaraP VegatlovesabotrotcelloC CBO -90 V VegatlovrettimeotrotcelloC CEO -90 V VegatlovesabotrettimE EBO -5 V ItnerrucrotcelloC C -50 mA PnoitapissidrewoprotcelloC C 150 mW 051jTerutarepmetnoitcnuJ TerutarepmetegarotS stg -55 to +150 Electrical Characteristics Ta = 25 PNP Transistors 2SA1171 Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 uA， IE=0 -90 Collector- emitter breakdown voltage VCEO Ic= -1 mA，RBE=∞ -90 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -5 Collector-base cut-off current ICBO VCB= -75 V , IE=0 -0.5 Emitter cut-off current IEBO VEB= -5 V , IC=0 -0.1 Collector-emitter saturation voltage VCE(sat) IC=-10 mA, IB=-1mA -0.5 Base-emitter saturation voltage VBE(sat) IC=-10 mA, IB=-1mA -1.2 Base-emitter voltage VBE VCE=-12V,IC=-2mA -0.75 DC current transfer ratio hFE 250 800 Collector output capacitance Cob VCB= -25 V , IE=0, f=1MHz 1.6 pF Transition frequency fT IC=-2 mAVCE=-12V, 200 MHz V V uA VCE=-12V,IC=-2mA ■ Classification of hfe Type 2SA1171-D 2SA1171-E Range 250-500 400-800 Marking PD PE 0.4+0.1 -0.1 2.9+0.1 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.1 2.4+0.1 -0.1 1.3+0.1 -0.1 0-0.1 0.38+0.1 -0.1 0.97+0.1 -0.1 0.55 0.4 1.Base 2.Emitter 3.collector 1 2 Unit: mmSOT-23 0.1+0.05 -0.01
www.kexin.com.cn2 Transistors PNP Transistors 2SA1171 ■ Typical Characterisitics 0 50 100 150 Ambient Temperature Ta (bC) Collector power dissipation Pc (mW) Maximum Collector Dissipation Curve 150 100