2SA1163_15 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
www.kexin.com.cn 1 Transistors PNP Transistors 2SA1163 ■ Features
- High voltage: VCEO = −120 V
- High hFE: hFE = 200~700
- Low noise: NF = 1dB (typ.), 10dB (max)
- Small package
- Complementary to 2SC2713 0.4+0.1 -0.1 2.9+0.1 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.1 2.4+0.1 -0.1 1.3+0.1 -0.1 0-0.1 0.38+0.1 -0.1 0.97+0.1 -0.1 0.55 0.4 1.Base 2.Emitter 3.collector 1 2 Unit: mmSOT-23 0.1+0.05 -0.01 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -120 Collector - Emitter Voltage VCEO -120 Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -100 Base Current IB -20 Collector Power Dissipation PC 150 W Junction Temperature TJ 125 Storage Temperature range Tstg -55 to 125 V mA ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -120 Collector- emitter breakdown voltage VCEO Ic= -1 mA， IB=0 -120 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -5 Collector-base cut-off current ICBO VCB= -120 V , IE=0 -100 Emitter cut-off current IEBO VEB= -5V , IC=0 -100 Collector-emitter saturation voltage VCE(sat) IC=-10 mA, IB=-1mA -0.3 Base - emitter saturation voltage VBE(sat) IC= -10 mA, IB=- 1mA -1.2 DC current gain hFE VCE= -6V, IC= -2mA 200 700 Noise figure NF VCE = −6 V, IC = −0.1 mA, f = 1 kHz, Rg = 10 kΩ, 1 10 dB Collector output capacitance Cob VCB= -10V, IE= 0,f=1MHz 4 pF Transition frequency fT VCE= -6V, IC= -1mA 100 MHz V V nA ■ Classification of hfe Type 2SA1163-G 2SA1163-L Range 200-400 350-700 Marking CG CL
www.kexin.com.cn2 Transistors PNP Transistors 2SA1163 ■ Typical Characterisitics
www.kexin.com.cn 3 Tran sistors PNP Transistors 2SA1163 ■ Typical Characterisitics