2SA1122_15 KEXIN
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Absolute Maximum Ratings Ta = 25 tinUgnitaRlobmySretemaraP VegatlovesabotrotcelloC CBO -55 V VegatlovrettimeotrotcelloC CEO -55 V VegatlovesabotrettimE EBO -5 V ItnerrucrotcelloC C -100 mA PnoitapissidrewoprotcelloC C 150 mW 051jTerutarepmetnoitcnuJ TerutarepmetegarotS stg -55 to +150 Electrical Characteristics Ta = 25 tinUxaMpyTniMsnotiidnoctseTlobmySretemaraP Collector to base breakdown voltage V(BR)CBO IC = -100uA, IE V55-0= Collector to emitter breakdown voltage V(BR)CEO IC = -1 mA, RBE = -55 V Emitter to base breakdown voltage V(BR)EBO IE = -100uA, IC V5-0= ItnerrucffotucrotcelloC CBO VCB = -30 V, IE Au1.0-0= ItnerrucffotucrettimE EBO VEB = - 4V, IC Au1.0-0= hoitarrefsnarttnerrucCD FE VCE = -12 V, IC = -2 mA 160 800 Collector to emitter saturation voltage VCE(sat) IC = -10 mA, IB V5.0-Am1-= VegatlovrettimeotesaB BE VCE = -12 V, IC V57.0-Am2-= hFE Classification PNP Transistors 2SA1122 0.4+0.1 -0.1 2.9+0.2 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.2 2.8 +0.2 -0.1 +0.2 -0.1 1 2 Unit: mmSOT-23-3 1.6 1. Base 2. Emitter 3. Collector 0.4 0.15 +0.02 -0.02 0.55 0-0.1 0.68 +0.1 -0.1 1.1 +0.2 -0.1 Type 2SA1122-C 2SA1122-D 2SA1122-E Range 160-320 250-500 400-800 Marking CC CD CE
www.kexin.com.cn2 Transistors PNP Transistors 2SA1122 ■ Typical Characterisitics 0 50 100 150 Ambient Temperature Ta (bC) Collector power dissipation Pc (mW) Maximum Collector Dissipation Curve 150 100