2SA1121_15 KEXIN

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Absolute Maximum Ratings Ta = 25 tinUgnitaRlobmySretemaraP VegatlovesabotrotcelloC CBO -35 V VegatlovrettimeotrotcelloC CEO -35 V VegatlovesabotrettimE EBO -4 V ItnerrucrotcelloC C -500 mA PnoitapissidrewoprotcelloC C 150 mW 051jTerutarepmetnoitcnuJ TerutarepmetegarotS stg -55 to +150 Electrical Characteristics Ta = 25 hFE(1) Classification PNP Transistors 2SA1121

  • Low frequency amplifier
  • Complementary pair with 2SC2618 Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 uA， IE=0 -35 Collector- emitter breakdown voltage VCEO Ic= -1 mA， IB=0 -35 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -4 Collector-base cut-off current ICBO VCB= -30 V , IE=0 -0.1 Emitter cut-off current IEBO VEB= -4V , IC=0 -0.1 Collector-emitter saturation voltage VCE(sat) IC=-150 mA, IB=-15mA -0.2 -0.6 Base-emitter saturation voltage VBE(sat) IC=-150 mA, IB=-15mA -1.2 Base-emitter voltage VBE IC=-10 mA, VCE=-3V -0.64 IC=-10 mA, VCE=-3V 100 320 IC=-500 mA, VCE=-3V 10 V uA V DC current transfer ratio hFE 0.4+0.1 -0.1 2.9+0.2 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.2 2.8 +0.2 -0.1 +0.2 -0.1 1 2 Unit: mmSOT-23-3 1.6 1. Base 2. Emitter 3. Collector 0.4 0.15 +0.02 -0.02 0.55 0-0.1 0.68 +0.1 -0.1 1.1 +0.2 -0.1 Type 2SA1121-C 2SA1121-D Range 100-200 160-320 Marking SC SD

www.kexin.com.cn2 Transistors PNP Transistors 2SA1121 ■ Typical Characterisitics –20 –40 –60 –80 –100 Collector to Emitter Voltage VCE (V) Collector Current IC (mA) Typical Output Characteristics (1) IB = 0 –0.1 mA –0.2 –0.4 –0.5 –0.6 –0.7 –0.8 –0.9–1.0 –0.3 –100 –200 –300 –400 –500 Collector to Emitter Voltage VCE (V) Collector Current IC (mA) Typical Output Characteristics (2) IB = 0 –1 mA –0.3 –1.0 –10 –30 Base to Emitter Voltage VBE (V) Collector Current IC (mA) Typical Transfer Characteristics Ta = 75 VCE = –3 V 25–25 100 150 Collector Current IC (mA) DC Current Transfer ratio hFE DC Current Transfer Ratio vs. Collector Current VCE = –3 V Ta = –25 120 160 200 240 Collector Current IC (mA) Gain Bandwidth Product fT (MHz) Gain Bandwidth Product vs. Collector Current VCE = –3 V 0 50 100 150 Ambient Temperature Ta (°C) Collector power dissipation Pc (mW) Maximum Collector Dissipation Curve 150 100