2SA1080 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
, O ne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SA1080
DESCRIPTION
- Collector-Emitter Breakdown Voltage- : V(BR)CEo= -40V(Min.)
- Good Linearity of hFE
- Complement to Type 2SC2530
APPLICATIONS
- Designed for medium power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25°C) IP \\ i PIN 1.BASE 2.COLLECTOR 3. EMITTER TO-220C package SYMBOL VCBO VCEO VEBO Ic PC Tj Tslg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Power Dissipation @TC=25°C Junction Temperature Storage Temperature Range VALUE -40 -40 -0.5 150 -65-150 UNIT V V V A W , , T Ma U i A J _JL 1 H , r K T f C i H DIM A B C D F G H J K L Q R S U V B H v ir TT^-L liV oh J m WIN 15.50 9.90 4.20 0.70 3.40 4.98 2.68 0.44 13,00 1.20 2.70 2.30 1.29 6.45 8.66 P *|l m MAX 15.90 10.20 450 0.90 3.70 5.18 2.90 0.60 13.40 1.45 2.90 2.70 1,35 6.65 8.86 *h j NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions \\vithout notice. Information furnished by N.I Semi-Conductors is believed to be both accurate and reliable at the time of going to press. Htwever. N.I Semi-Coiuluctors assumes no responsibility for any errors or omissions discovered in its use. N.I Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors
Silicon PNP Power Transistor 2SA1080
ELECTRICAL CHARACTERISTICS
Tc=25°C unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VcE(sat) VBE(sat) ICBO ICEO IEBO HFE COB fT PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain Outut Capacitance Current-Gain — Bandwidth Product CONDITIONS lc= -1mA; RBE= °° lc=-0.1u A;IE=0 lE=-0.1u A; lc=0 lc=-10mA; lB=-1mA lc=-10mA; IB= -1mA VCB= -40V; IE= 0 VCE= -40V; IB= 0 VEB= -7V; lc= 0 lc=-10mA;VCE=-5V !E= 0; VCB= -20V; f= 1.0MHz lc= -10mA;VCE= -10V; f=10MHz MIN -40 -40 100 TYP. MAX -0.5 -1.0 -100 -500 -100 350 UNIT V V V V V nA nA nA PF MHz