2SA1080 ETC
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Technical content
eso* Soa SILICON PNP RING EMITTER TRANSISTOR (RET) Rasy Fr. The 2SA 1080 is a silicon PNP M.C.-Head amplifier use transistor fabricated with Q | Be Fujitsu’s unique Ring Emitter Transistor (RET) technology. RET devices are i ctite constructed with multiple emitters connected through diffused balast resistors which provide uniform current density. This structure permits the design of OUTLINE DIMENSION M.C.-Head amplifier use transistors with exceptional frequency response along with JEDEC TO-220 excellent current gain linearity. O69 max. A NPN complement, 2SC 2530, is available. osm) “SMa | [fen sate: ; Le a @ High f;=30MHz (TYP.) iene een © Excellent Current Gain-Linearity ree oo gg ABSOLUTE MAXIMUM RATINGS ie oe Pe oom nee ] tom! Bee (2S o098 fe Collector to Base Voltage Veso 40 v 25 Hee L Emitter to Base Voltage Veo 7 v (a0, 2. Collector to Emitter Voltage Voce 40 v : a : Collector Current le o5 | A [ert Collector Power Dissipation (To = 25°C) Po 20 w z Eee Junction T tt T, +150 °c : : eee 1 ——— 1: Base 2: Collector 3: Emitter Storage Temperature Range Tstg ~65~+150 °C _ Dimension in inches and (millimeters) ELECTRICAL CHARACTERISTICS (T, = 25°C) | Limits Parameter | Symbol Test Conditions —— - Unit | Min, Typ. Max. Collector Cutoff Current lcBo Vep=40V, Ie =0 - | = | 10 | na Emitter Cutoff Current lego Ves=7V, Ic=0 = - 100 nA Collector Cutoff Current Iceo Vee =40V, Ig =0 }oo- - 500 nA Collector to Base Breakdown Voltage Viprycso | Ic=100nA, Ip =0 40 - - v Emitter to Base Breakdown Voltage Visr)eBo | le=100nA, Ic =0 7 - - v Collector to Emitter Breakdown Voltage Visriceo | Ic=1mA, — Rage =00 40 - - v DC Current Gain bee Vce=5V, Ic=10mA_* yoo | - | 350 - Collector to Emitter Saturation Voltage | Vee(saty I¢=10mA, Ig=1mA_ * — | 0.025 05 v eee ese | Rsat) | ic mA, te — { Base to Emitter Saturation Voltage VBE (sat) Io=10mA, Ig=1mA_ * ~ 0.65 10 | ov Gain-Bandwidth Product fr Vce=10V, I¢=10mA, f=10MHz - 30 — | Miz Output Capacitance Cop Vep=20V, le=0, f= 1MHz - 65 pF * Pulsed: Pulse Width < 300us Duty Cycle < 6%