2SA1080 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn isc & iscsemi is registered trademark 1 isc Silicon PNP Power Transistor 2SA1080
DESCRIPTION
- Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min.)
- Good Linearity of hFE
- Complement to Type 2SC2530
APPLICATIONS
- Designed for medium power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -0.5 A PC Collector Power Dissipation @TC=25℃ 20 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn isc & iscsemi is registered trademark 2 isc Silicon PNP Power Transistor 2SA1080
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; RBE= ∞ -40 V V(BR)CBO Collector-Base Breakdown Voltage IC= -0.1μ A; IE= 0 -40 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -0.1μ A; IC= 0 -7 V VCE(sat) Collector-Emitter Saturation Voltage IC= -10mA; IB= -1mA -0.5 V VBE(sat) Base-Emitter Saturation Voltage IC= -10mA; IB= -1mA -1.0 V ICBO Collector Cutoff Current VCB= -40V; IE= 0 -100 nA ICEO Collector Cutoff Current VCE= -40V; IB= 0 -500 nA IEBO Emitter Cutoff Current VEB= -7V; IC= 0 -100 nA hFE DC Current Gain IC= -10mA; VCE= -5V 100 350 COB Outut Capacitance IE= 0; VCB= -20V; f= 1.0MHz 65 pF fT Current-Gain—Bandwidth Product IC= -10mA;VCE= -10V; f=10MHz 30 MHz