2SA1052_15 KEXIN

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Absolute Maximum Ratings Ta = 25 tinUgnitaRlobmySretemaraP VegatlovesabotrotcelloC CBO -30 V VegatlovrettimeotrotcelloC CEO -30 V VegatlovesabotrettimE EBO -5 V ItnerrucrotcelloC C -100 mA ItnerrucrettimE E 100 mA PnoitapissidrewoprotcelloC C 150 mW 051jTerutarepmetnoitcnuJ TerutarepmetegarotS stg -55 to +150 Electrical Characteristics Ta = 25 hFE Classification PNP Transistors 2SA1052 Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -30 Collector- emitter breakdown voltage VCEO Ic= -1 mA， RBE=∞ -30 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -5 Collector-base cut-off current ICBO VCB= -20 V , IE=0 -0.1 Emitter cut-off current IEBO VEB= -4V , IC=0 -0.1 Collector-emitter saturation voltage VCE(sat) IC=-10 mA, IB=-1mA -0.2 Base-emitter saturation voltage VBE(sat) IC=-10 mA, IB=-1mA -1.2 Base-emitter voltage VBE VCE= -12 V , IC=-2mA -0.75 DC current gain hFE VCE= -12V, IC= -2mA 100 500 V u A V 0.4+0.1 -0.1 2.9+0.2 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.2 2.8 +0.2 -0.1 +0.2 -0.1 1 2 Unit: mmSOT-23-3 1.6 1. Base 2. Emitter 3. Collector 0.4 0.15 +0.02 -0.02 0.55 0-0.1 0.68 +0.1 -0.1 1.1 +0.2 -0.1 Type 2SA1052-B 2SA1052-C 2SA1052-D Range 100-200 160-320 250-500 Marking MB MC MD

www.kexin.com.cn2 Transistors PNP Transistors 2SA1052 ■ Typical Characterisitics 100 200 300 Ambient Temperature Ta (°C) Collector Power Dissipation PC (mW) Maximum Collector Dissipation Curve 100 150 0 –0.2 –0.4 Collector Emitter Voltage VCE (V) Collector Current IC (mA) Typical Output Characteristics (1) –0.6 –0.8 –1.0 IB = 0 –5 µA –10 –15 –20 –25 –25 –5 –10 Collector Emitter Voltage VCE (V) Collector Current IC (mA) Typical Output Characteristics (2) –15 –20 –25 IB = 0 –5 µA –10 –15 –20 –0.2 –0.4 Base to Emitter Voltage VBE (V) Collector Current IC (mA) Typical Transfer Characteristics –0.6 –0.8 –1.0 VCE = –12 V Ta = 75 100 200 300 400 500 –0.1–0.01 –1.0 Collector Current IC (mA) DC Current Transfer Ratio hFE DC Current Transfer Ratio vs. Collector Current –10 –100 VCE = –12 V 100 200 300 400 500 –1.0–0.5 –2 Collector Current IC (mA) Gain Bandwidth Product fT (MHz) Gain Bandwidth Product vs. Collector Current –5 –10 –20 VCE = –12 V

www.kexin.com.cn 3 Tran sistors PNP Transistors 2SA1052 ■ Typical Characterisitics Ta = 75°C –0.12 –0.08 –0.04 –0.20 –0.16 –0.24 –0.28 5–1– 2– Collector Current IC (mA) Collector to Emitter Saturation Voltage VCE(sat) (V) Collector to Emitter Saturation Voltage vs. Collector Current –10 –20 –50 –100 IC = 10 IB