2SA1042 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
<3zmi-L.ondu.ctoi '[Pioducti, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SA1042
DESCRIPTION
- High Current Capability
- Good Linearity of hFE
- Collector-Emitter Breakdown Voltage- : V(BR)CEO= -70V(Min.)
- Complement to Type 2SC2432
APPLICATIONS
- Designed for high speed, high voltage switching systems. ABSOLUTE MAXIMUM RATINGS(Ta=25°C) SYMBOL VCBO VGEO VEBO Ic IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation @TC=25C Junction Temperature Storage Temperature VALUE -70 -70 -15 100 175 -65-175 UNIT V V V A A W I PIN 1.BASE 2. BvllTTER 3. COLLECT OR (CASE) TO-3 package IK V MM inni MIH 1 MAX 3900 25.30 3 7,60 MO 8. 60 i so 1 60 S4t> 400 13 50 1705 450 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use " NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors
Silicon PNP Power Transistor 2SA1042
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)6BO VcE(sat) VsEfsat) ICBO ICEO IEBO hpE-1 hFE-2 COB fi PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Output Capacitance Current-Gain — Bandwidth Product CONDITIONS lc= -1 OmA; RBE= «> IC=-50/.M;IE=0 lE=-1mA;lc=0 lc= -7A; IB= -0.7A |c= -7A; IB= -0.7A VCB= -70V; IE= 0 VCE= -70V; IB= 0 VES= -4V; lc= 0 lc= -1 -5A; VOE= -5V lc=-15A;VCE=-5V lE=0;VCB=-10V;f= 1.0MHz lc=-1A; VCE=-10V MIN -70 -70 TYP. 350 MAX -1.5 -1.8 -50 -50 200 UNIT V V V V V MA mA U A PF MHz Switching Times tr tstg tf Rise Time Storage Time Fall Time lc= -7.5A; IB1= -IB2= -0.75A; RL=4n 0.8 1.0 0.8 u s M S U s