2SA1042 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn isc & iscsemi is registered trademark 1 isc Silicon PNP Power Transistor 2SA1042
DESCRIPTION
- High Current Capability
- Good Linearity of hFE
- Collector-Emitter Breakdown Voltage- : V(BR)CEO= -70V(Min.)
- Complement to Type 2SC2432
APPLICATIONS
- Designed for high speed, high voltage switching systems. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Voltage -70 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A IB Base Current-Continuous -5 A PC Collector Power Dissipation @TC=25℃ 100 W Tj Junction Temperature 175 ℃ Tstg Storage Temperature -65~175 ℃
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn isc & iscsemi is registered trademark 2 isc Silicon PNP Power Transistor 2SA1042
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; RBE= ∞ -70 V V(BR)CBO Collector-Base Breakdown Voltage IC= -50μA; IE= 0 -70 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 -5 V VCE(sat) Collector-Emitter Saturation Voltage IC= -7A; IB= -0.7A -1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= -7A; IB= -0.7A -1.8 V ICBO Collector Cutoff Current VCB= -70V; IE= 0 -50 μ A ICEO Collector Cutoff Current VCE= -70V; IB= 0 -1 mA IEBO Emitter Cutoff Current VEB= -4V; IC= 0 -50 μ A hFE-1 DC Current Gain IC= -1.5A; VCE= -5V 35 200 hFE-2 DC Current Gain IC= -15A; VCE= -5V 10 COB Output Capacitance IE= 0; VCB= -10V; f= 1.0MHz 350 pF fT Current-Gain—Bandwidth Product IC= -1A; VCE= -10V 60 MHz Switching Times tr Rise Time IC= -7.5A; IB1= -IB2= -0.75A; RL= 4Ω 0.8 μ s tstg Storage Time 1.0 μ s tf Fall Time 0.8 μ s