2SA1036-HF_15 KEXIN

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 2

Technical content

Features

Large IC. ICMax. = -500mA Low VCE(sat). Ideal for low-voltage operation. Absolute Maximum Ratings Ta = 25 tinUgnitaRlobmySretemaraP Vegatlovesab-rotcelloC CBO -40 V Vegatlovrettime-rotcelloC CEO -32 V Vegatlovesab-rettimE EBO -5 V I*tnerrucrotcelloC C -0.5 A PnoitapissidrewoprotcelloC C 0.2 W TerutarepmetnoitcnuJ j 150 TerutarepmetegarotS stg -55 to +150 * PC max. must not be exceeded. Electrical Characteristics Ta = 25 hFE Classification Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -40 Collector- emitter breakdown voltage VCEO Ic= -1 mA， IB=0 -32 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -5 Collector-base cut-off current ICBO VCB= -20 V , IE=0 -100 Emitter cut-off current IEBO VEB= -4V , IC=0 -100 Collector-emitter saturation voltage VCE(sat) IC=-100 mA, IB=-1mA -0.4 Base - emitter saturation voltage VBE(sat) IC=-100mA, IB=-1mA -1.2 DC current gain hFE VCE= -3V, IC= -10mA 82 390 Output capacitance Cob VCB= -10V, IE= 0,f=1MHz 7 pF Transition frequency fT VCE= -5V, IE=- 20mA,f=100MHz 200 MHz V V nA Type 2SA1036/K-P-HF 2SA1036/K-Q-HF2SA1036/K-R-HF Range 82-180 120-270 180-390 Marking HP F HQ F HR F 0.4+0.1 -0.1 2.9+0.1 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.1 2.4+0.1 -0.1 1.3+0.1 -0.1 0-0.1 0.38+0.1 -0.1 0.97+0.1 -0.1 0.55 0.4 1.Base 2.Emitter 3.collector 1 2 Unit: mmSOT-23 0.1+0.05 -0.01 PNP Transistors 2SA1036-HF (2SA1036K-HF)

  • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish

www.kexin.com.cn2 Transistors ■ Typical Characterisitics 001-01-1- -10 -100 -1000 -200 -400 -600 -800 -1000 -10 -100 001-01-1- 100 1000 001-01-1- -200 -400 -600 -800 -1000 -1200 0 25 50 75 100 125 150 100 150 200 250 01-1-1.0- 100 -0 -1 -2 -3 -4 -12 -15 01-1- 100 1000 hFE — — -500 Ta=100℃ Ta=25℃ β=10 IC VCEsat — — COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) COLLECTOR CURRENT IC (mA) -500 Ta=25℃Ta=100℃ COMMON EMITTER VCE=-3V COLLCETOR CURRENT IC (mA) BASE-EMMITER VOLTAGE VBE (mV) COMMON EMITTER VCE=-3V Ta=25 o C Ta=100 o C IC DC CURRENT GAIN hFE COLLECTOR CURRENT IC (mA) -500 VBEIC — — -500 β=10 Ta=100℃ Ta=25℃ IC VBEsat — — BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR CURRENT IC (mA) COLLECTOR POWER DISSIPATION Pc (mW) AMBIENT TEMPERATURE Ta ( )℃ Pc — — Ta Cob Cib f=1MHz IE=0/ IC=0 Ta=25 o C CAPACITANCE C (pF) REVERSE VOLTAGE V (V) -20 VCB/ VEBCob/ Cib — — -50uA -45uA -40uA -35uA -30uA -25uA -20uA -15uA Static Characteristic -10uA COMMON EMITTER Ta=25℃ IB=-5uA COLLECTOR CURRENT IC (mA) COLLECTOR-EMITTER VOLTAGE VCE (V) ICfT — — -20 COMMON EMITTER VCE=-5V Ta=25 o C TRANSITION FREQUENCY fT (MHz) COLLECTOR CURRENT IC (mA) PNP Transistors 2SA1036-HF (2SA1036K-HF)