2SA1035_15 KEXIN

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Absolute Maximum Ratings Ta = 25 tinUgnitaRlobmySretemaraP Vegatlovesab-rotcelloC CBO -55 V Vegatlovrettime-rotcelloC CEO -55 V Vegatlovesab-rettimE EBO -5 V ItnerrucrotcelloC C -50 mA ItnerrucrotcellockaeP CP -100 mA PnoitapissidrewoprotcelloC C 200 mW TerutarepmetnoitcnuJ j 150 TerutarepmetegarotS stg -55 to +150 0.4+0.1 -0.1 2.9+0.1 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.1 2.4+0.1 -0.1 1.3+0.1 -0.1 0-0.1 0.38+0.1 -0.1 0.97+0.1 -0.1 0.55 0.4 1.Base 2.Emitter 3.collector 1 2 Unit: mmSOT-23 0.1+0.05 -0.01 PNP Transistors 2SA1035 ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -55 Collector- emitter breakdown voltage VCEO Ic= -2 mA， IB=0 -55 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -5 Collector-base cut-off current ICBO VCB= -50 V , IE=0 -100 nA Collector- emittercut-off current ICEO VCE= -40 V , IB=0 -1 uA Emitter cut-off current IEBO VEB= -5V , IC=0 -100 nA Collector-emitter saturation voltage VCE(sat) IC=-100 mA, IB=-10mA -0.6 Base - emitter saturation voltage VBE(sat) IC=-100 mA, IB=-10mA -1.2 Base - emitter voltage VBE VBE=-1V, IC=-100mA -1.0 DC current gain hFE VCE= -5V, IC= -2mA 180 700 Noise voltage NV VCE = –10V, IC = –1mA, GV = 80dB Rg = 100kΩ, Function = FLAT 150 mV Transition frequency fT VCB= -5V, IE= -2mA,f=200MHz 200 MHz V V

  • Low noise voltage NV.
  • High foward current transfer ratio hFE.
  • Complementary to 2SC2406. ■ Classification of hfe Type 2SA1035-R 2SA1035-S 2SA1035-T Range 180-360 260-520 360-700 Marking HR HS HT

www.kexin.com.cn2 Transistors PNP Transistors 2SA1035 ■ Typical Characterisitics 0610 40 12080 14020 10060 240 200 160 120 Ambient temperature Ta (˚C) Collector power dissipation PC (mW) –160 –120 –40 –100 –140 –80 –20 –60 Ta=25˚C IB=–350µA –300µA –250µA –200µA –150µA –100µA –50µA Collector to emitter voltage VCE (V) Collector current IC (mA) –160 –120 –40 –100 –140 –80 –20 –60 VCE=–5V Ta=25˚C Base current IB (mA) Collector current IC (mA) –800 –600 –200 –500 –700 –400 –100 –300 VCE=–5V Ta=25˚C Base to emitter voltage VBE (V) Base current IB (µA) –120 –100 –80 –60 –40 –20 VCE=–5V Ta=75˚C –25˚C 25˚C Base to emitter voltage VBE (V) Collector current IC (mA) – 0.01 – 0.03 – 0.1 – 0.3 –10 –30 –100 IC/IB=10 Ta=75˚C 25˚C –25˚C Collector current IC (mA) Collector to emitter saturation voltage VCE(sat) (V) 600 500 400 300 200 100 VCE=–5V Ta=75˚C 25˚C –25˚C Collector current IC (mA) Forward current transfer ratio hFE 0.1 1 10 1000.3 3 30 500 400 300 200 100 450 350 250 150 VCB=–5V Ta=25˚C Emitter current IE (mA) Transition frequency fT (MHz) IE=0 f=1MHz Ta=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) PC IaT— C — VCE IC — IB IB — VBE IC — VBE VCE(sat) — IC hFE — IC fT — IE Cob — VCB

www.kexin.com.cn 3 Tran sistors PNP Transistors 2SA1035 ■ Typical Characterisitics 160 120 100 140 IC=–1mA GV=80dB Function=FLAT 4.7kΩ Rg=100kΩ 22kΩ Collector to emitter voltage VCE (V) Noise voltage NV (mV) 160 120 100 140 VCE=–10V GV=80dB Function=FLAT 4.7kΩ Rg=100kΩ 22kΩ Collector current IC (mA) Noise voltage NV (mV) 300 240 120 180 VCE=–10V GV=80dB Function=RIAA 4.7kΩ Rg=100kΩ 22kΩ Collector current IC (mA) Noise voltage NV (mV) 1 3 10 30 100 160 120 100 140 VCE=–10V GV=80dB Function=FLAT – 0.1mA IC=–1mA – 0.5mA Signal source resistance Rg (kΩ) Noise voltage NV (mV) 1 3 10 30 100 300 240 120 180 – 0.1mA IC=–1mA – 0.5mA VCE=–10V GV=80dB Function=RIAA Signal source resistance Rg (kΩ) Noise voltage NV (mV) 300 240 120 180 IC=–1mA GV=80dB Function=RIAA 4.7kΩ Rg=100kΩ 22kΩ Collector to emitter voltage VCE (V) Noise voltage NV (mV) NV — VCE NV — VCE NV — IC NV — IC NV — Rg NV — Rg