2SA1022_15 KEXIN

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  • Manufacturer or author: Provided By digicamel.com
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www.kexin.com.cn 1 Transistors PNP Transistors 2SA1022 ■ Features 0.4+0.1 -0.1 2.9+0.1 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.1 2.4+0.1 -0.1 1.3+0.1 -0.1 0-0.1 0.38+0.1 -0.1 0.97+0.1 -0.1 0.55 0.4 1.Base 2.Emitter 3.collector 1 2 Unit: mmSOT-23 0.1+0.05 -0.01 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -30 Collector - Emitter Voltage VCEO -20 Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -30 mA Collector Power Dissipation PC 200 mW Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 V ■ Classification of hfe

  • High transition frequency fT.
  • Complementary to 2SC2295 ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -30 Collector- emitter breakdown voltage VCEO Ic= -1 mA， IB=0 -20 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -5 Collector-base cut-off current ICBO VCB= -30 V , IE=0 -0.1 Collector- emittercut-off current ICEO VCE= -20 V , IE=0 -10 Emitter cut-off current IEBO VEB= -5V , IC=0 -0.1 Collector-emitter saturation voltage VCE(sat) IC=-10 mA, IB=-1mA -0.1 Base-emitter saturation voltage VBE(sat) -1.2 Base - emitter voltage VBE -0.7 DC current gain hFE 70 220 Reverse transfer impedance Rrb VCB = –10V, IE = 1mA, f = 2MHz 22 Ω Noise figure NF VCB = –10V, IE = 1mA, f = 5MHz 2.8 dB Common emitter reverse transfer capacitance Cre VCE= -10V, IC= -1mA,f=10.7MHz 1.2 pF Transition frequency fT VCB= -10V, IE= 1mA,f=200MHz 300 MHz V V uA VCE = -10 V, IC =-1mA IC=-10 mA, IB=-1mA VCE = -10 V, IC =-1mA 150 Type 2SA1022-B 2SA1022-C Range 70-140 110-220 Marking EB EC

www.kexin.com.cn2 Transistors PNP Transistors 2SA1022 ■ Typical Characterisitics 0610 40 12080 14020 10060 240 200 160 120 Ambient temperature Ta (˚C) Collector power dissipation PC (mW) –30 –25 –20 –15 –10 Ta=25˚C IB=–250µA –200µA –150µA –100µA –50µA Collector to emitter voltage VCE (V) Collector current IC (mA) – 0.01 – 0.03 – 0.1 – 0.3 –10 –30 –100 IC/IB=10 Ta=75˚C 25˚C –25˚C Collector current IC (mA) Collector to emitter saturation voltage VCE(sat) (V) 120 100 VCE=–10V Ta=75˚C 25˚C –25˚C Collector current IC (mA) Forward current transfer ratio hFE IE=0 f=1MHz Ta=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) IC=–1mA f=10.7MHz Ta=25˚C Collector to emitter voltage VCE (V) Common emitter reverse transfer capacitance Cre (pF) 0.1 1 10 1000.3 3 30 600 500 400 300 200 100 VCB=–10V Ta=25˚C Emitter current IE (mA) Transition frequency fT (MHz) VCE=–10V f=100MHz Ta=25˚C Collector current IC (mA) Power gain PG (dB) 0.1 0.3 1 3 10 VCB=–10V f=100MHz Ta=25˚C Emitter current IE (mA) Noise figure NF (dB) PC IaT— C — VCE VCE(sat) — IC hFE — IC Cob — VCB Cre — VCE fT — IE PG — IC NF — IE