2SA1003 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
, O ne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SA1003
DESCRIPTION
- High Current Capability
- Collector-Emitter Breakdown Voltage- :V(BR)CEo=-150V(Min.)
APPLICATIONS
- Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBQ VCEO VEBO Ic PC Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Power Dissipation c Junction Temperature Storage Temperature VALUE -150 -150 -12 120 150 -55-150 UNIT V V V A W t I PIN 1.BASE Y 1 EMITTER TV 3. COLLECT OR (CASE) J TO-3 package r t
- A -J 1 1 I ( I -^frlt*". D 2 PL ^a^\\/ i ^-CLx^ ' -&B nun DIM MIN MAX A 3900 B 2530 2667 C 7.80 8.30 D 0.90 t 10 E I .W 1 .60 G 1092 H 546 K It. 40 13.50 L 1675 1705 N 19.40 1962 Q 4 00 4 20 U 30.00 3020 V 4 30 4 50 I
- EB t ; B NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors
Silicon PNP Power Transistor 2SA1003
ELECTRICAL CHARACTERISTICS
Tj=25'C unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VcE(sat) ICBO IEBO HFE fr PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Current-Gain — Bandwidth Product CONDITIONS lc= -30mA; IB= 0 lc=-1mA; IE=0 lE=-1mA; lc=0 lc= -8A; IB= -0.8A VCB=-150V; IE=0 VEB= -6V; lc= 0 lc= -0.5A ; VCE= -5V lc=-1A;VcE=-10V MIN -150 -150 TYP. MAX -3.0 -50 -50 200 UNIT V V V V MA MA MHz