2SA1002 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
- crTVf , li ne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SA1002
DESCRIPTION
- High Current Capability
- Collector-Emitter Breakdown Voltage- :V(BR)cEO=-120V(Min.)
APPLICATIONS
- Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) PIN 1.BASE 2. BWIITTER 3. COLLECT OR (C AS E) TO-3 package SYMBOL VCBO VCEO VEBO Ic PC Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Power Dissipation @TC=25'C Junction Temperature Storage Temperature VALUE -120 -120 -12 120 150 -55-150 UNIT V V V A W r 4 • IE M t r i..
- *•• S kh, ,,4 V DIM A B D E _a_ H K L N v v V -N— I I 4U-D u — * |*L-* ^L~SX a_^ (Tj ^ r^ -L^l in MIN 2530 7.80 O.SO t.40 11.33 1675 1940 4.0C" 30.CK? 430 7 PL / I 0 c i n MAX 26.67 8.5Q I 10 1. 60 1350 1705 JI&LJ ~42(p _^_20_, 450 LK t , B i J NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. " NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors
Silicon PNP Power Transistor 2SA1002
ELECTRICAL CHARACTERISTICS
Tj=25"C unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO vCE(sat) ICBO IEBO hFE fr PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Current-Gain — Bandwidth Product CONDITIONS lc= -30mA; IB= 0 lc=-1mA; IE=0 lE=-1mA; lc=0 lc= -8A; IB= -0.8A Vce=-120V; !E=O VEB= -6V; lc= 0 lc= -0.5A ; VC6= -5V lc=-1A;VCE=-10V MIN -120 -120 TYP. MAX -3.0 -50 -50 200 UNIT V V V V MA M A MHz