2SA1001 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
£.ii£ii »_/ , Li ne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SA1001
DESCRIPTION
- High Current Capability
- Collector-Emitter Breakdown Voltage- : V(BR)CEo=-130V(Min.)
APPLICATIONS
- Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic PC Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Power Dissipation @TC=25°C Junction Temperature Storage Temperature VALUE -130 -130 150 -55-150 UNIT V V V A W PIN 1.BASE 2. EMITTER TO-3 package « A H r-N-^ j, 1 1 C 1 1 -JU-D V- f*-L-~ f DIM A B ^_c D E _i_ H K L N ._- ii_ U V /t\\^Xl ?PL LK / , 1~* c ®^s 1 -ffl tnni MIN MAX 39.00 25,30 7,80 0.9C1 1.40 26.67 8.60 1 10 1 60 1 0 92 54E- 11.30 1675 19. 40 400 L_300fi_ 430 1350 1705 1962 420 3020 450 t ; B \\J Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors
Silicon PNP Power Transistor 2SA1001
ELECTRICAL CHARACTERISTICS
Tj=25'C unless otherwise specified SYMBOL V{BR)CEO V(BR)CBO V(BR)EBO VcE(sal) ICBO IEBO hFE fr PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Current-Gain — Bandwidth Product CONDITIONS lc= -30mA; IB= 0 lc=-1mA; IE=0 lE=-1mA; lc= 0 lc= -5A; IB= -0.5A VCB=-130V; IE=0 VEB= -6V; lc= 0 lc=-0.5A;VCE=-5V lc=-1A;VCE=-10V MIN -130 -130 TYP. MAX -2.0 -50 -50 200 UNIT V V V V u A MA MHz