2SA1001 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn isc & iscsemi is registered trademark 1 isc Silicon PNP Power Transistor 2SA1001
DESCRIPTION
- High Current Capability
- Collector-Emitter Breakdown Voltage- : V(BR)CEO= -130V(Min.)
APPLICATIONS
- Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -130 V VCEO Collector-Emitter Voltage -130 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -8 A PC Collector Power Dissipation @TC=25℃ 80 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn isc & iscsemi is registered trademark 2 isc Silicon PNP Power Transistor 2SA1001
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 -130 V V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA; IE= 0 -130 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 -6 V VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A -2.0 V ICBO Collector Cutoff Current VCB= -130V; IE= 0 -50 μ A IEBO Emitter Cutoff Current VEB= -6V; IC= 0 -50 μ A hFE DC Current Gain IC= -0.5A ; VCE= -5V 50 200 fT Current-Gain—Bandwidth Product IC= -1A ; VCE= -10V 40 MHz