Download PDF2SA0921 PANASONIC
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1Publication date: January 2003 SJC00007BED 2SA0921 (2SA921) Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SC1980 ■ Features
- High collector-emitter voltage (Base open) VCEO
- Low noise voltage NV ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) V CBO −120 V Collector-emitter voltage (Base open) V CEO −120 V Emitter-base voltage (Collector open) V EBO −5V Collector current I C −20 mA Peak collector current I CP −50 mA Collector power dissipation P C 250 mW Junction temperature T j 150 °C Storage temperature T stg −55 to +150 °C Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V CBO IC = −10 µA, IE = 0 −120 V Collector-emitter voltage (Base open) V CEO IC = −1 mA, IB = 0 −120 V Emitter-base voltage (Collector open) V EBO IE = −10 µA, IC = 0 −5V Collector-base cutoff current (Emitter open) ICBO VCB = −50 V, IE = 0 −100 nA Collector-emitter cutoff current (Base open) ICEO VCE = −50 V, IB = 0 −1 µA Forward current transfer ratio * hFE VCE = −5 V, IC = −2 mA 180 700 Collector-emitter saturation voltage V CE(sat) IC = −20 mA, IB = −2 mA − 0.6 V Transition frequency f T VCB = −5 V, IE = 2 mA, f = 200 MHz 200 MHz Noise voltage NV V CE = −40 V, IC = −1 mA, GV = 80 dB 150 mV Rg = 100 kΩ, Function = FLAT ■ Electrical Characteristics Ta = 25°C ± 3°C Unit: mm Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification 5.0±0.2 0.7±0.1 0.45+0.15 –0.1 2.5+0.6 –0.2 0.45+0.15 –0.1 2.5 12 3 +0.6 –0.2 4.0±0.2 5.1±0.212.9±0.5 2.3±0.2 0.7±0.2 1: Emitter 2: Collector 3: Base Note) The part number in the parenthesis shows conventional part number. Rank R S T hFE 180 to 360 260 to 520 360 to 700
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VCE(sat) IC hFE IC fT IE PC Ta IC VCE IC VBE Cob VCB NV IC 0 200 16040 120 80 500 400 300 200 100 Collector power dissipation PC (mW) Ambient temperature Ta (°C) −24 −20 −16 −12 Ta = 25°C −30 µA −45 µA −40 µA −10 µA −15 µA −25 µA −35 µA −5 µA −20 µA IB = −50 µA Collector current IC (mA) Collector-emitter voltage VCE (V) −60 −50 −40 −30 −20 −10 VCE = −5 V Ta = 75°C −25°C 25°C Base-emitter voltage VBE (V) Collector current IC (mA) − 0.1 −1 −10 −100 − 0.01 − 0.1 −10 −100 IC / IB = 10 Ta = 75°C25°C −25°C Collector to emitter saturation voltage VCE(sat) (V) Collector current IC (mA) − 0.1 −1 −10 −100 1 000 800 600 400 200 VCE = −5 V Ta = 75°C 25°C −25°C Forward current transfer ratio hFE Collector current IC (mA) 0.1 1 10 100 320 240 200 280 160 120 VCB = −5 V Ta = 25°C Transition frequency fT (MHz) Emitter current IE (mA) −1 −10 −100 IE = 0 f = 1 MHz Ta = 25°C Collector-base voltage VCB (V) Collector output capacitance (Common base, input open circuited) Cob (pF) − 0.01 − 0.1 −1 120 100 VCE = −10 V GV = 80 dB Function = FLAT 4.7 kΩ Rg = 100 kΩ 22 kΩ Noise voltage NV (mV) Collector current IC (mA)
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