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1Publication date: February 2003 SJD00002BED 2SA0885 (2SA885) Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SC1846 ■ Features
- Output of 3 W can be obtained by a complementary pair with 2SC1846
- TO-126B package which requires no insulation plate for installa- tion to the heat sink ■ Absolute Maximum Ratings Ta = 25°C ■ Electrical Characteristics Ta = 25°C ± 3°C Unit: mm 1: Emitter 2: Collector 3: Base Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V CBO IC = −10 µA, IE = 0 −45 V Collector-emitter voltage (Base open) V CEO IC = −2 mA, IB = 0 −35 V Collector-base cutoff current (Emitter open) ICBO VCB = −20 V, IE = 0 − 0.1 µA Collector-emitter cutoff current (Base open) ICEO VCE = −20 V, IB = 0 −100 µA Emitter-base cutoff current (Collector open) IEBO VEB = −5 V, IC = 0 −10 µA Forward current transfer ratio h FE1 * VCE = −10 V, IC = −500 mA 85 340 hFE2 VCE = −5 V, IC = −1 A 50 Collector-emitter saturation voltage V CE(sat) IC = −500 mA, IB = −50 mA − 0.5 V Transition frequency f T VCE = −10 V, IE = 50 mA, f = 200 MHz 200 MHz Collector output capacitance C ob VCB = −10 V, IE = 0, f = 1 MHz 20 30 pF (Common base, input open circuited) Parameter Symbol Rating Unit Collector-base voltage (Emitter open) V CBO −45 V Collector-emitter voltage (Base open) V CEO −35 V Emitter-base voltage (Collector open) V EBO −5V Collector current I C −1A Peak collector current I CP −1.5 A Collector power dissipation PC 1.2 W 5.0 * Junction temperature T j 150 °C Storage temperature T stg −55 to +150 °C Note) *: With a 100 × 100 × 2 mm Al heat sink Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Note) The part number in the parenthesis shows conventional part number. Rank Q R S hFE1 85 to 170 120 to 240 170 to 340 8.0+0.5 –0.1 1.9±0.1 3.05±0.1 3.8±0.3 11.0±0.516.0±1.0 3.2±0.2 0.75±0.1 0.5±0.1 2.3±0.2 4.6±0.2 0.5±0.1 1.76±0.1 123 φ 3.16±0.1
2 SJD00002BED
VCE(sat) IC VBE(sat) IC hFE IC PC Ta IC VCE IC IB fT IE Cob VCB VCER RBE 0 200 40 80 160 120 (1)With a 100 × 100 × 2 mm Al heat sink (2)Without heat sink (1) (2) Collector power dissipation PC (W) Ambient temperature Ta (°C) −1.50 −1.25 −1.00 −0.75 −0.50 −0.25 TC=25˚C IB=–10mA –1mA –2mA –3mA –4mA –5mA –6mA –9mA –8mA –7mA Collector current IC (A) Collector-emitter voltage VCE (V) –1.2 –1.0 –0.8 –0.6 –0.4 –0.2 VCE=–10V TC=25˚C Base current IB (mA) Collector current IC (A) –0.01 –0.01 –0.1 –10 –0.1 –1 IC/IB=10 TC=100˚C 25˚C –25˚C Collector-emitter saturation voltage VCE(sat) (V) Collector current IC (A) –0.01 –0.01 –0.1 –1 –0.1 –10 IC/IB=10 TC=–25˚C 25˚C 100˚C Base-emitter saturation voltage VBE(sat) (V) Collector current IC (A) –0.01 –0.1 –1 1 000 100 VCE=–10V TC=100˚C 25˚C –25˚C Forward current transfer ratio hFE Collector current IC (A) 1 10 100 120 200 160 VCB=–10V f=200MHz T C=25˚C Transition frequency fT (MHz) Emitter current IE (mA) –1 –10 –100 IE=0 f=1MHz T C=25˚C Collector output capacitance (Common base, input open circuited) Cob (pF) Collector-base voltage VCB (V) 0.1 1 10 100 –20 –40 –60 –80 –100 IC=–10mA TC=25˚C Base-emitter resistance RBE (kΩ) Collector-emitter voltage (Resistor between B and E) VCER (V)
ICEO Ta Safe operation area 102 103 104 0 160 40 120 80 ICEO (Ta) ICEO (Ta = 25°C) VCE=–10V Ambient temperature Ta (°C) –0.001 –0.1 –0.01 –0.1 –10 –1 –10 –100 Single pulse TC=25˚C t=10ms t=1s ICP IC Collector current IC (A) Collector-emitter voltage VCE (V)
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