Download PDF2SA0879 PANASONIC
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1Publication date: November 2002 SJC00006BED 2SA0879 (2SA879) Silicon PNP epitaxial planar type For general amplification Complementary to 2SC1573 ■ Features
- High collector-emitter voltage (Base open) VCEO ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) V CBO −250 V Collector-emitter voltage (Base open) V CEO −200 V Emitter-base voltage (Collector open) V EBO −5V Collector current I C −70 mA Peak collector current I CP −100 mA Collector power dissipation P C 1W Junction temperature T j 150 °C Storage temperature T stg −55 to +150 °C Parameter Symbol Conditions Min Typ Max Unit Collector-emitter voltage (Base open) V CEO IC = −100 µA, IB = 0 −200 V Emitter-base voltage (Collector open) V EBO IE = −1 µA, IC = 0 −5V Forward current transfer ratio * hFE VCE = −10 V, IC = −5 mA 60 220 Collector-emitter saturation voltage V CE(sat) IC = −50 mA, IB = −5 mA −1.5 V Transition frequency f T VCB = −10 V, IE = 10 mA, f = 200 MHz 50 80 MHz Collector output capacitance C ob VCB = −10 V, IE = 0, f = 1 MHz 5 10 pF (Common base, input open circuited) ■ Electrical Characteristics Ta = 25°C ± 3°C Unit: mm Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification 5.9±0.2 0.7±0.1 4.9±0.2 8.6±0.2 0.7+0.3 –0.2 13.5±0.5 2.54±0.15(3.2) (1.27)(1.27) 0.45+0.2 –0.1 0.45+0.2 –0.1 13 2 Rank Q R hFE 60 to 150 100 to 220 1 : Emitter 2 : Collector 3 : Base EIAJ : SC-51 Note) The part number in the parenthesis shows conventional part number.
2 SJC00006BED
IB VBE IC VBE VCE(sat) IC PC Ta IC VCE IC IB hFE IC fT IE Cob VCB 0 160 40 120 80 14020 100 60 1.2 1.0 0.8 0.6 0.4 0.2 Collector power dissipation PC (W) Ambient temperature Ta (°C) −120 −100 −80 −60 −40 −20 Ta = 25°C IB = −2 mA −1.8 mA −1.6 mA −1.4 mA −1.2 mA −1.0 mA − 0.8 mA − 0.4 mA − 0.6 mA − 0.2 mA Collector current IC (mA) Collector-emitter voltage VCE (V) −120 −100 −80 −60 −40 −20 VCE = −10 V Ta = 25°C Base current IB (mA) Collector current IC (mA) −2.4 −2.0 −1.6 −1.2 − 0.8 − 0.4 VCE = −10 V Ta = 25°C Base-emitter voltage VBE (V) Base current IB (mA) −120 −100 −80 −60 −40 −20 VCE = −10 V Ta = 75°C −25°C 25°C Base-emitter voltage VBE (V) Collector current IC (mA) − 0.1 −1 −10 −100 − 0.01 − 0.1 −10 −100 IC / IB = 10 Ta = 75°C25°C −25°C Collector to emitter saturation voltage VCE(sat) (V) Collector current IC (mA) − 0.1 −1 −10 −100 300 250 200 150 100 VCE = −10 V Ta = 75°C 25°C −25°C Forward current transfer ratio hFE Collector current IC (mA) 0.1 1 10 100 160 120 100 140 VCB = −10 V f = 100 MHz Ta = 25°C Transition frequency fT (MHz) Emitter current IE (mA) −1 −10 −100 f = 1 MHz IE = 0 Ta = 25°C Collector-base voltage VCB (V) Collector output capacitance (Common base, input open circuited) Cob (pF)
IEBO Ta ICBO Ta Safe operation area 02 0 0 16040 120 80 100 1 000 10 000 VEB = −5 V Ambient temperature Ta (°C) IEBO (Ta) IEBO (Ta = 25°C) 0 200 16040 120 80 100 1 000 10 000 VCB = −250 V Ambient temperature Ta (°C) ICBO (Ta) ICBO (Ta = 25°C) −1 −10 −100 −1 000 − 0.1 −10 −100 −1 000 Single pulse Ta = 25°C t = 10 ms t = 1 s ICP IC Collector current IC (mA) Collector-emitter voltage VCE (V)
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