2PD602A KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
Features
High current (max. 500 mA) Low voltage (max. 50 V). Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage V CBO 60 V Collector-emitter voltage V CEO 50 V Emitter-base voltage V EBO 5V Collector current (DC) I C 500 mA Peak collector current I CM 1A Peak base current I BM 200 mA Total power dissipation Tamb 25 ;* Ptot 250 mW Storage temperature T stg - 6 5t o+ 1 5 0 Junction temperature T j 150 Operating ambient temperature T amb - 6 5t o+ 1 5 0 Thermal resistance from junction to ambient * R th j-a 500 K/W * Transistor mounted on an FR4 printed-circuit board.
www.kexin.com.cn2 SMD Type ICSMD Type Transistors Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Max Unit IE =0 ;VCB = 60 V 10 nA IE =0 ;VCB =6 0V ;Tj =1 5 0 5ì A Emitter cut-off current I EBO IC =0 ;VEB =4V 1 0 n A DC current gain 2PD602AQ 85 170 2PD602AR 120 240 2PD602AS 170 340 DC current gain h FE IC =5 0 0m A ;VCE =1 0V ;* Collector-emitter saturation voltage V CEsat IC =3 0 0m A ;IB =3 0m A ;* 6 0 0 m V Collector capacitance C c IE =i e=0 ;VCB =1 0V ;f=1M H z 1 5 p F Transition frequency 2PD602AQ 140 2PD602AR 160 2PD602AS 180 * Pulse test: tp 300 ìs; ä 0.02. MHzfT IC =5 0m A ;VCE =1 0V ;f=1 0 0M H z* ICBOCollector cut-off current hFE IC =1 5 0m A ;VCE =1 0V ;* 2PD602A Marking Type Number 2PD602AQ 2PD602AR 2PD602AS hFE XQ XR XS