2PD601A KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
Features
Low current (max. 100 mA) Low voltage (max. 50 V). Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage V CBO 60 V Collector-emitter voltage V CEO 50 V Emitter-base voltage V EBO 6V Collector current (DC) I C 100 mA Peak collector current I CM 200 mA Peak base current I BM 100 mA Total power dissipation Tamb 25 ;* Ptot 250 mW Storage temperature T stg - 6 5t o+ 1 5 0 Junction temperature T j 150 Operating ambient temperature T amb - 6 5t o+ 1 5 0 Thermal resistance from junction to ambient * R th j-a 500 K/W * Transistor mounted on an FR4 printed-circuit board.
www.kexin.com.cn2 SMD Type ICSMD Type Transistors 2PD601A Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit IE =0 ;VCB = 60 V 10 nA IE =0 ;VCB =6 0V ;Tj = 150 5ì A Emitter cut-off current I EBO IC =0 ;VEB =5V 1 0 n A DC current gain 2PD601AQ 160 260 2PD601AR 210 340 2PD601AS 290 460 DC current gain h FE IC = 100 mA; VCE =2V ; 9 0 Collector-emitter saturation voltage V CEsat IC = 100 mA; IB = 10 mA; * 500 mV Collector capacitance C c IE =i e=0 ;VCB =1 0V ;f=1M H z 3 . 5 p F Transition frequency 2PD601AQ 100 2PD601AR 120 2PD601AS 140 * Pulse test: tp 300 ìs; ä 0.02. fT IC =2m A ;VCE = 10 V; f = 100 MHz * MHz ICBOCollector cut-off current hFE IC =2m A ;VCE =1 0V ;* Marking Type Number 2PD601AQ 2PD601AR 2PD601AS Marking ZQ ZR ZS