2PB710A KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
Features
High current (max. 500 mA) Low voltage (max. 50 V). Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage V CBO -60 V Collector-emitter voltage V CEO -50 V Emitter-base voltage V EBO -5 V Collector current (DC) I C -500 mA Peak collector current I CM -1 A Peak base current I BM -200 mA Total power dissipation Tamb 25 ;* Ptot 250 mW Storage temperature T stg - 6 5t o+ 1 5 0 Junction temperature T j 150 Operating ambient temperature T amb - 6 5t o+ 1 5 0 Thermal resistance from junction to ambient * R th j-a 500 K/W * Transistor mounted on an FR4 printed-circuit board.
www.kexin.com.cn2 SMD Type ICSMD Type Transistors Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit IE =0 ;VCB = -60 V -10 nA IE =0 ;VCB =- 6 0V ;Tj = 150 -5 ìA Emitter cut-off current I EBO IC =0 ;VEB =- 5V - 1 0 n A DC current gain 2PB710AQ 85 170 2PB710AR 120 240 2PB710AS 170 340 DC current gain I C = -500 mA; VCE =- 1 0V ;* 4 0 Collector-emitter saturation voltage V CEsat IC = -300 mA; IB = -30 mA * -600 mV Base-emitter saturation voltage V BEsat IC = -300 mA; IB = -30 mA * -1.5 V Collector capacitance C c IE =i e =0 ;VCB = -10 V; f = 1 MHz 15 pF Transition frequency 2PB710AQ 100 2PB710AR 120 2PB710AS 140 *. Pulse test: tp 300 ìs; ä 0.02. ICBOCollector cut-off current hFE IC = -150 mA; VCE =- 1 0V * fT IC =- 5 0m A ;VCE = -10 V; f = 100 MHz* MHz 2PB710A Marking Type Number 2PB710AQ 2PB710AR 2PB710AS Marking DQ DR DS