2PB709A KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
Features
Low current (max. 100 mA) Low voltage (max. 45 V). Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage V CBO -45 V Collector-emitter voltage V CEO -45 V Emitter-base voltage V EBO -6 V Collector current (DC) I C -100 mA Peak collector current I CM -200 mA Peak base current I BM -100 mA Total power dissipation(Tamb 25 ;* ) Ptot 250 mW Storage temperature T stg - 6 5t o+ 1 5 0 Junction temperature T j 150 Operating ambient temperature T amb - 6 5t o+ 1 5 0 Thermal resistance from junction to ambient R th j-a 500 K/W * Transistor mounted on an FR4 PCB.
www.kexin.com.cn2 SMD Type ICSMD Type Transistors hFE Classification TYPE 2PB709AQ 2PB709AR 2PB709AS Marking BQ BR BS 2PB709A Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Max Unit IE =0 ;VCB = -45 V -10 nA IE =0 ;VCB =- 4 5V ;Tj =1 5 0 -5 ìA Emitter cut-off current I EBO IC =0 ;VEB =- 5V - 1 0 n A DC current gain 2PB709AQ 160 260 2PB709AR 210 340 2PB709AS 290 460 Collector-emitter saturation voltage V CE(sat) IC = -100 mA; IB = -10 mA * -500 mV Collector capacitance C c IE =i e =0 ;VCB =- 1 0V ;f=1M H z 5 p F Transition frequency 2PB709AQ 60 2PB709AR 70 2PB709AS 80 * Pulse test: tp 300 ìs; ä 0.02. Collector cut-off current hFE IC =- 2m A ;VCE =- 1 0V fT IC =- 1m A ;VCE = -10 V; f = 100 MHz MHz ICBO