2PB1219A KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
Features
High current (max. 500 mA) Low voltage (max. 50 V) Low collector-emitter saturation voltage (max. 600 mV). Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage V CBO -60 V Collector-emitter voltage V CEO -50 V Emitter-base voltage V EBO -5 V Collector current I C -500 mA Peak collector current I CM -1 A Peak base current I BM -200 mA Total power dissipation P tot 200 mW Storage temperature T stg - 6 5t o+ 1 5 0 Junction temperature T j 150 Operating ambient temperature T amb - 6 5t o+ 1 5 0 Thermal resistance from junction to ambient R th j-a 625 K/W
www.kexin.com.cn2 SMD Type ICSMD Type Transistors Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cut-off current I CBO IE =0 ;VCB = -20 V -100 nA IE =0 ;VCB =- 2 0V ;Tj = 150 -5 ìA Emitter cut-off current I EBO IC =0 ;VEB = -4 V -100 nA DC current gain 2PB1219AQ 2PB1219AR 2PB1219AS h FE IC = -150 mA; VCE =- 1 0V ;* 85 120 170 170 240 340 Collector-emitter saturation voltage V CE(sat) IC = -300 mA; IB = -30 mA; * -600 mV Base-emitter saturation voltage V BE(sat) IC = -300 mA; IB =- 3 0m A ;* - 1 . 5 V Collector capacitance C c IE =i e=0 ;VCB = -10 V; f = 1 MHz 15 pF Transition frequency 2PB1219AQ 2PB1219AR 2PB1219AS f T IC =5 0m A ;VCE = -10 V;f = 100 MHz;* 100 120 140 MHz * Pulse test: tp 300 ìs; ä 0.02. hFE Classification TYPE 2PB1219AQ 2PB1219AR 2PB1219AS Marking DQ DR DS 2PB1219A