2N930 MICROSEMI

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NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/253 Devices Qualified Level 2N930 JAN JANTX JANTXV MAXIMUM RATINGS Ratings Symbol Value Units Collector - Emitter Voltage V CEO 45 Vdc Collector - Base Voltage V CB O 60 Vdc Emitter - Base Voltage V EBO 6.0 Vdc Collector Current IC 30 mAdc Total Power Dissipation @ T A = +25 0 C (1) @ T C = +25 0 C (2) P T 300 600 mW Operating & Storage Junction Temperature Range T J , T stg - 55 to +200 0 C THERMAL CHARACTERISTICS Characteristics Symbol Max. Unit Thermal Resistance, Junction - to - Case R θJC 97 0 C/W 1) Derate linearly 2.0 mW/ 0 C above T A = +25 0 C 2) Derate linearly 4.0 mW/ 0 C above T C = +25 0 C TO- 18* (TO-206AA) *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TC = +250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage I C = 10 mAdc V (BR)CEO 45 Vdc Collector - Base Cutoff Current V CB = 6 0 Vdc V CB = 45 Vdc ICBO µAdc ηAdc Emitter - Base Cutoff Current V EB = 6.0 Vdc V EB = 5.0 Vdc IEBO 5.0 µAdc ηAdc Collector - Emitter Cutoff Current V CE = 45 Vdc ICES 2.0 ηAdc Collector - Base Cutoff Current V CE = 5.0 Vdc ICEO 2.0 ηAdc

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2N930, JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Symbol Min. Max. Unit ON CHARACTERISTICS (3) Forward - Current Transfer Ratio I C = 10 µAdc, V CE = 5.0 Vdc I C = 500 µAdc, V CE = 5.0 Vdc I C = 10 mAdc, V CE = 5.0 Vdc h FE 100 150 300 600 Collector - Emitter Saturation Voltage I C = 10 mAdc, I B = 0.5 m Adc V CE(sat) 1.0 Vdc Base - Emitter Saturation Voltage I C = 10 mAdc, I B = 0.5 mAdc V BE(sat) 0.6 1.0 Vdc DYNAMIC CHARACTERISTICS Magnitude of Small - Signal Short - Circuit Forward Current Transfer Ratio I C = 500 µAdc, V CE = 5.0 Vdc, f = 30 MHz h fe  1.5 6.0 Small - Signal Short - Circuit Forward Current Transfer Ratio I C = 1.0 mAdc, V CE = 5.0 Vdc, f = 1.0 kHz h fe 150 600 Small - Signal Short - Circuit Input Impedance V CB = 5.0 Vdc, I E = 1.0 mAdc, f = 1.0 kHz h ib 25 32 Ω Small - Signal Short - Circui t Output Admittance V CB = 5.0 Vdc, I E = 1.0 mAdc, f = 1.0 kHz h ob 1.0 µΩ Output Capacitance V CB = 5.0 Vdc, I E = 0, 100 kHz ≤ f ≤ 1.0 MHz C obo 8.0 pF Noise Figure V CE = 5 Vdc; I C = 10 µAdc; R g =10k Ω Test 1: f = 100 Hz Test 2: f = 1.0 kH z Test 3: f = 10 kHz NF dB (3) Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%. 1 - 800 - 446 - 1158 / (978) 794 - 1666 / Fax: (978) 689 - 0803 120101 Page 2 of 2