2N7236_10 MICROSEMI

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 4

Technical content

6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http://www.microsemi.com P-CHANNEL MOSFET Qualified per MIL-PRF-19500/595 T4-LDS-0061 Rev. 2 (101873) Page 1 of 4 DEVICES LEVELS 2N7236 2N7236U JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Drain – Source Voltage V DS -100 Vdc Gate – Source Voltage V GS ± 20 Vdc Continuous Drain Current T C = +25°C ID1 -18 Adc Continuous Drain Current T C = +100°C ID2 -11 Adc Max. Power Dissipation T C = +25°C Ptl 125 (1) W Drain to Source On State Resistance R ds(on) 0.20 (2) Ω Operating & Storage Temperature T op, Tstg -55 to +150 °C Note: (1) Derated Linearly by 1.0 W/°C for TC > +25°C (2) VGS = 10Vdc, ID = -11A ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions Symbol Min. Max. Unit OFF CHARACTERTICS Drain-Source Breakdown Voltage VGS = 0V, ID = 1mAdc V(BR)DSS -100 Vdc Gate-Source Voltage (Threshold) VDS ≥ VGS, ID = -0.25mA VDS ≥ VGS, ID = -0.25mA, Tj = +125°C VDS ≥ VGS, ID = -0.25mA, Tj = -55°C VGS(th)1 VGS(th)2 VGS(th)3 -2.0 -1.0 -4.0 -5.0 Vdc Gate Current VGS = ±20V, VDS = 0V VGS = ±20V, VDS = 0V, Tj = +125°C IGSS1 IGSS2 ±100 ±200 nAdc Drain Current VGS = 0V, VDS = -80V VGS = 0V, VDS = -100V, Tj = +125°C VGS = 0V, VDS = -80V, Tj = +125°C IDSS1 IDSS2 IDSS3 -25 -1.0 -0.25 µAdc mAdc mAdc Static Drain-Source On-State Resistance VGS = 10V, ID = -11A pulsed VGS = -10V, ID = -18A pulsed Tj = +125°C VGS = -10V, ID = -11A pulsed rDS(on)1 rDS(on)2 rDS(on)3 0.20 0.22 0.34 Ω Ω Ω Diode Forward Voltage VGS = 0V, ID = -18A pulsed VSD -5.0 Vdc TO-254AA U-PKG (SMD-1) (TO-267AB)

6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http://www.microsemi.com T4-LDS-0061 Rev. 2 (101873) Page 2 of 4 DYNAMIC CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit Gate Charge: Qg(on) Qgs Qgd 35.2 nC On-State Gate Charge Gate to Source Charge Gate to Drain Charge VGS = -10V, ID = -18A VDS = -50V SWITCHING CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit Switching time tests: Turn-on delay time Rinse time Turn-off delay time Fall time I D = -11A, VGS = -10Vdc, Gate drive impedance = 9.1Ω, VDD = -50Vdc td(on) tr td(off) tf ns Diode Reverse Recovery Time di/dt ≤ 100A/µs, VDD ≤ 30V, ID = -18A trr 280 ns

  1. Dimensions are in inches.
  2. Millimeters are given for general information only.
  3. Protrusion thickness of ceramic eyelets included in dimension LL.
  4. All terminals are isolated from case.
  5. In accordance with ASME Y14. 5M, diameters are equivalent to φx symbology.

FIGURE 1. Physical dimensions for TO-254AA (2N7236)

  1. Dimensions are in inches.
  2. Millimeters are given for information only.
  3. The lid shall be electrically isolat ed from the drain, gate and source.
  4. In accordance with ASME Y14. 5M, diameters are equivalent to φx symbology.

FIGURE 2. Dimensions and configuration of surface mount package outline (TO-267AB), 2N7236U.