2N7225_10 MICROSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 4
Technical content
6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/592 T4-LDS-0048 Rev. 2 (101154) Page 1 of 4 DEVICES LEVELS 2N7225 2N7225U JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) TO-254AA U-PKG (U3) TO-276AB Parameters / Test Conditions Symbol Value Unit Drain – Source Voltage V DS 200 Vdc Gate – Source Voltage V GS ± 20 Vdc Continuous Drain Current T C = +25°C ID1 27.4 Adc Continuous Drain Current T C = +100°C ID2 17 Adc Max. Power Dissipation T C = +25°C Ptl 150 (1) W Drain to Source On State Resistance R ds(on) 0.1 (2) Ω Operating & Storage Temperature T op, Tstg -55 to +150 °C Note: (1) Derated Linearly by 1.2 W/°C for TC > +25°C (2) VGS = 10Vdc, ID = 17A ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions Symbol Min. Max. Unit Drain-Source Breakdown Voltage VGS = 0V, ID = 1mAdc V(BR)DSS 200 Vdc Gate-Source Voltage (Threshold) VDS ≥ VGS, ID = 0.25mA VDS ≥ VGS, ID = 0.25mA, Tj = +125°C VDS ≥ VGS, ID = 0.25mA, Tj = -55°C VGS(th)1 VGS(th)2 VGS(th)3 2.0 1.0 4.0 5.0 Vdc Gate Current VGS = ±20V, VDS = 0V VGS = ±20V, VDS = 0V, Tj = +125°C IGSS1 IGSS2 ±100 ±200 nAdc Drain Current VGS = 0V, VDS = 160V VGS = 0V, VDS = 160V, Tj = +125°C IDSS1 IDSS2 0.25 µAdc mAdc Static Drain-Source On-State Resistance VGS = 10V, ID = 17A pulsed VGS = 10V, ID = 27.4A pulsed Tj = +125°C VGS = 10V, ID = 17A pulsed rDS(on)1 rDS(on)2 rDS(on)3 0.100 0.105 0.17 Ω Ω Ω Diode Forward Voltage VGS = 0V, ID = 27.4A pulsed VSD 1.9 Vdc
6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http: //www.microsemi.com T4-LDS-0048 Rev. 2 (101154) Page 2 of 4 DYNAMIC CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit Gate Charge: Qg(on) Qgs Qgd nC On-State Gate Charge Gate to Source Charge Gate to Drain Charge V GS = 10V, ID = 27.4A VDS = 50V 115 SWITCHING CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit Switching time tests: Turn-on delay time Rinse time Turn-off delay time Fall time I D = 27.4A, VGS = 10Vdc, Gate drive impedance = 7.5Ω, VDD = 100Vdc td(on) tr td(off) tf 190 170 130 ns Diode Reverse Recovery Time di/dt ≤ 100A/µs, VDD ≤ 30V, IF = 27.4A trr 950 ns
- Dimensions are in inches.
- Millimeters are given for general information only.
- Glass meniscus included in dimension D and E.
- All terminals are isolated from the case.
- In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
FIGURE 1. Physical dimensions for TO-254AA
- Dimensions are in inches.
- Millimeters are given for information only.
- The lid shall be electrically isolated from the drain, gate and source.
- In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
FIGURE 2. Dimensions and configuration of surface mount package outline (TO-276AB) 2N7224U,