2N718A MICROSEMI

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NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/181 Devices Qualified Level 2N718A 2N1613 2N1613L JAN JANTX JANTXV MAXIMUM RATINGS Ratings Symbol Value Unit Collector - Emitter Voltage V CEO 30 Vdc Collector - Base Voltage V CBO 75 Vdc Emitter - Base Voltage V EBO 7.0 Vdc Collector Current IC 500 mAdc Total Power Dissipation @ T A = +25 0 C (1) 2N718A 2N1613, L @ T C = +25 0 C (2) 2N718A 2N1613, L P T 0.5 0.8 1.8 3.0 W Operating & Storage Junction Temperature Range T J , T stg - 55 to +175 0 C THERMAL CHARACTERISTICS Characteristics Symbol Max. Unit Thermal Resistance, Junction - to - Case 2N718A 2N1613, L R θJC

0 C/W

1) Derate linearly 4.57 mW/ 0 C for 2N1613, L and 2.85 mW/ 0 C for 2N718A for T A > +25 0 C 2) Derate linearly 17.2 mW/ 0 C for 2N1613, L and 10.3 mW/ 0 C for 2N718A for T C > +25 0 C TO-18 (TO-206AA)* 2N718A TO-39 (TO-205AD)* 2N1613 TO-5* 2N1613L *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage I C = 30 mAdc V (BR)CEO 30 Vdc Co llector - Emitter Breakdown Voltage I C = 10 mAdc, R BE = 10 Ω V (BR)CER Vdc Collector - Base Cutoff Current V CB = 60 Vdc ICBO ηAdc Emitter - Base Cutoff Current V EB = 5.0 Vdc IEBO ηAdc

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2N718A, 2N1613, 2N1613L JAN, SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Symbol Min. Max. Unit ON CHARACTERISTICS (3) For ward - Current Transfer Ratio I C = 0.1 mAdc, V CE = 10 Vdc I C = 10 mAdc, V CE = 10 Vdc I C = 150 mAdc, V CE = 10 Vdc I C = 500 mAdc, V CE = 10 Vdc h FE 120 Collector - Emitter Saturation Voltage I C = 150 mAdc, I B = 15 mAdc V CE(sat)

1.5 Vdc

Base - Emitter Saturation Voltage I C = 150 mAdc, I B = 15 mAdc V BE(sat) 1.3 Vdc DYNAMIC CHARACTERISTICS Magnitude of Small - Signal Forward Current Transfer Ratio I C = 50 mAdc, V CE = 10 Vdc, f = 20 MHz h fe  3.0 Small - Signal F orward Current Transfer Ratio I C = 1.0 mAdc, V CE = 5.0 Vdc, f = 1.0 kHz I C = 5.0 mAdc, V CE = 10 Vdc, f = 1.0 kHz h fe 30 100 150 Small - Signal Short Circuit Input Impedance I C = 5.0 mAdc, V CB = 10 Vdc, f = 1.0 kHz h ib 4.0 8.0 Ω Small - Signal Sh ort Circuit Output Admittance I C = 5.0 mAdc, V CB = 10 Vdc, f = 1.0 kHz h ob 1.0 ηΩ Output Capacitance V CB = 10 Vdc, I E = 0, 100 kHz ≤ f ≤ 1.0 MHz C obo 25 pF SWITCHING CHARACTERISTICS Turn - On Time + Turn - Off Time (See Figure 1 of MIL - PRF - 19500/ 181) ton + toff 30 ηs (3)Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%. 1 - 800 - 446 - 1158 / (978) 794 - 1666 / Fax: (978) 689 - 0803 120101 Page 2 of 2