2N7052 NJSEMI

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Technical content

20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-6960 2N7052 2N7053 TO-92 TO-226 NPN Darlington Transistor This device is designed for applications requiring extremely high gain at collector currents to 1.0 A and high breakdown voltage. Sourced from Process 06. Absolute Maximum Ratings* TA = 25:C unless otherwise noted Symbol VCEO VCBO VEBO Ic Tj, Tstg Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range Value 100 100 1.5 -55 to +150 Units V V V A C These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2} These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25 C unless otherwise noted Symbol PD Rejc ROJA Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max 2N7052 625 5.0 83.3 200 2N7053 1,000 8.0 125 *NZT7053 1,000 8.0 125 Units mW mW/0C °C/W "C/W N'.l Semi-Conductors reserves the right lo change test conditions parameter limits and package dimensions without notice. Information furnished by N.I Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However N.I Semi-Conductors assumes no responsibility tor any errors or omissions discovered in its use. N.I Semi-Conductors encourages customers to verifv that datasheets are current before placing orders.

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Electrical Characteristics

TA - 25 C unless otherwise noted Symbol Parameter Test Conditions Min Max Units OFF CHARACTERISTICS VIBRJCEO V(BR)CBO V,BR)EBO ICBO ICES IEBO Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Cutoff Current Collector-Cutoff Current Emitter-Cutoff Current lc = 1.0mA, IB = 0 lc = 100(iA, IE = 0 IE = 1.0mA, lc = 0 Vca = 80 V, IE = 0 VCE = 80 V, IE = 0 VEB = 7.0 V, lc = 0 100 100 0.1 0.2 0.1 V V V HA HA HA ON CHARACTERISTICS* HFE Vce(sat) VBEIOID DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage lc = 100 mA, VCE = 5.0V IC = 1.0A,VCE = 5.0V lc = 100mA, IB = 0.1 mA lc = 100mA, VBE = 5.0V 10,000 1,000 20,000 1.5 2.0 V V SMALL SIGNAL CHARACTERISTICS FT CCb Transition Frequency Collector-Base Capacitance lc = 1 00mA, VCE = 5.0V, VCB = 10V,f=1.0MHz 2N7052 2N7053 200 8.0 MHz PF Pulse Test: Pulse Width t 300 na. Duty Cycle £ 1 0% Typical Characteristics Typical Pulsed Current Gain Collector-Emitter Saturation £ vs Collector Current £• Voltage vs Collector Current 3 100 o 0 60 Q UI ">. ar. 3 20 £ o

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