2N7002TE KEXIN

Document overview

www.kexin.com.cn 1 MOSFE T N-Channel MOSFET 2N7002TE ■ Features

VDS (V) = 60V
ID = 0.29 A
RDS(ON) ＜ 2Ω (VGS = 20V) SOT-523 Unit:mm 0.2 +0.05 -0.05 1.0 +0.1 -0.1 1.6 +0.1 -0.1 1.6+0.15 -0.15 0.3±0.05 0.5+0.1 -0.1 0.75+0.05 -0.05 0.8±0.1 0.15±0.05 0.8+0.1 -0.1 0.36±0.1 0.55 (REF.) 1. Gate 2. Source 3. Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ±20 Continuous Drain Current ID 0.29 Pulsed Drain Current IDM 1.2 Power Dissipation PD 150 mW Thermal Resistance.Junction- to-Ambient RthJA 833 ℃/W Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V A ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=250μA, VGS=0V 60 V VDS=60V, VGS=0V 1 VDS=60V, VGS=0V, TJ=125℃ 500 Gate-Body Leakage Current IGSS VDS=0V, VGS=±20V ±10 uA Gate Threshold Voltage VGS(th) VDS=VGS , ID=250uA 1 2.5 V VGS=20V, ID=500mA 2 VGS=5V, ID=50mA 7.5 On-State Drain Current ID(on) VGS = 10 V, VDS = 7.5 V 1.43 A Forward Transconductance gFS VDS=10V, ID=0.2A 356.5 mS Input Capacitance Ciss 37.8 50 Output Capacitance Coss 12.4 25 Reverse Transfer Capacitance Crss 6.5 7 Turn-On DelayTime td(on) 5.85 20 Turn-Off DelayTime td(off) 12.5 20 Diode Forward Voltage VSD IS=0.2A,VGS=0V 1.2 V pF ns Zero Gate Voltage Drain Current IDSS uA VGS=10V, VDS=30V, ID=0.2A, RGEN=25Ω,RL=150Ω VGS=0V, VDS=25V, f=1MHz Static Drain-Source On-Resistance RDS(On) Ω
RDS(ON) ＜ 7.5Ω (VGS = 5V)