2N7002K-3 KEXIN

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Features

Low On-Resistance: RDS(ON) Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage 2N7002K Absolute Maximum Ratings Ta=25 Electrical Characteristics Ta = 25 Marking Notes: 1. Device mounted on FR-4 PCB. Note: 2. Short duration test pulse used to minimize self-heating effect. Marking 702. N-Channel Enhancement MOSFET

  • ESD Protected 2KV HBM Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage (Note.2) VDSS ID=100μA, VGS=0V 60 V Zero Gate Voltage Drain Current (Note.2) IDSS VDS=60V, VGS=0V 1 μA Gate-Body Leakage Current (Note.2) IGSS VDS=0V, VGS=±20V ±10 uA Gate Threshold Voltage (Note.2) VGS(th) VDS=VGS , ID=250μA 1 1.6 2.5 V VGS=10V, ID=500mA 2 VGS=10V, ID=50mA 3 Forward Transfer Admittance (Note.2) | Yfs | VGS=10V, ID=200mA 80 ms Input Capacitance Ciss 50 Output Capacitance Coss 25 Reverse Transfer Capacitance Crss 5 Total Gate Charge Qg VGS=4.5V, VDS=15V, ID=200mA 0.8 nC Turn-On DelayTime td(on) 20 Turn-Off DelayTime td(off) 40 Static Drain-Source On-Resistance (Note.2) RDS(On) Ω pF ns ID=200mA, VDS=30V, RG=10Ω,VGEN=10V,RL=150Ω VGS=0V, VDS=25V, f=1MHz Source Gate Protection Diode Gate D rain 0.4+0.1 -0.1 2.9+0.2 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.2 2.8 +0.2 -0.1 +0.2 -0.1 1 2 Unit: mmSOT-23-3 1.6 0.4 0.15 +0.02 -0.02 0.55 0-0.1 0.68 +0.1 -0.1 1.1 +0.2 -0.1

0.2 0.4 0.6 0.8 1.0 0 1 2 3 4 5 V DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics DS , )A(TNERRUC NIARD ID, 1.2 1.4 8V10V V = 10V GS V , GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics GS 0.01 0.10 1.00 1 1.5 2 2.5 3 3.5 4 4.5 5 ,ID )A(TNERRUC NIARD T = 125 CA ° T = 25 CA ° T = -25 CA ° T = 75 CA ° V = 10V Pulsed DS T , CHANNEL TEMPERATURE (°C) Fig. 3 Gate Threshold Voltage vs. Channel Tem perature ch 0.5 1.5 -50 -25 0 25 50 75 100 125 150 )V( EGATLOV DLOHSERHT ETAG V ,)ht(SG V = 10V I = 1mA Pulsed DS D 0.1 I DRAIN CURRENT (A) Fig. 4 Static Drain-Source On-Resistance Vs. Drain Current 0.001 0.01 0.1 1 T = 150 CA ° T = 125 CA ° T = 85 CA ° T = -55 CA ° T = 25 CA ° T = 0 CA ° T = -25 CA ° V = 10V Pulsed GS SMD Type MOSFET 2 www.kexin.com.cn 2N7002K I , DRAIN CURRENT (A) Fig. 5 Static Drain-Source On-Resistance vs. Drain Current D 0.1 0.001 0.01 0.1 V = 5V Pulsed GS T = 150 CA ° T = 125 CA ° T = 85 CA ° T = -55 CA ° T = 25 CA ° T = -25 CA °T = 0 CA ° V GATE SOURCE VOLTAGE (V) Fig. 6 Static Drain-Source On-Resistance vs. Gate-Source Voltage GS, 0 2 4 6 8 10 12 14 16 18 20 I = 300mAD I = 150mAD T = 25 C Pulsed A ° Typical Characteristics

)A( TNERRUC NIARD ESREVER, I RD 0.001 0.01 0.1 0 0.5 1 1.5 V , Fig. 8 Reverse Drain Current vs. Source-Drain Voltage SD SOURCE-DRAIN VOLTAGE (V) V = 0V Pulsed GS T = -55 CA ° T = 150 CA ° T = 125 CA ° T = 85 CA ° T = 25 CA ° T = 0 CA ° T = -25 CA ° Tch, CHANNEL TEMPERATURE ( C) Fig. 7 Static Drain-Source On-State Resistance vs. Channel Tem perature 0.5 1.5 2.5 -75 -50 -25 0 25 50 75 100 125 150 V = 10V Pulsed GS I = 300mAD I = 150mAD I , DRAIN CURRENT (A)D Fig.10 Forward Transfer Admittance vs. Drain Current )S( ECNATTIMDA REFSNART DRA WROF,| sf 0.001 0.01 0.1 0.001 0.01 0.1 V = 10V Pulsed GS T = 25 CA ° T =A -55 C° T =A 150 C° T =A 85 C° 0.001 0.01 0.1 0 0.5 )A( TNERRUC NIARD ESREVER, I RD V , Fig. 9 Reverse Drain Current vs. Source-Drain Voltage SD SOURCE-DRAIN VOLTAGE (V) V = 0VGS V = 10VGS T = 25°C Pulsed A SMD Type MOSFET 3www.kexin.com.cn 2N7002K