2N7002K_V01 YFWDIODE
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Features
Low On-Resistance: R DS(ON) Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Absolute Maximum Ratings Ta=25 Electrical Characteristics Ta = 25 Notes: 1. Device mounted on FR-4 PCB. Note: 2. Short duration test pulse used to minimize self-heating effect. ƽ ESD Protected 2KV HBM Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage (Note.2) V DSS I D =100A, V GS =0V 60 V Zero Gate Voltage Drain Current (Note.2) I DSS V DS =60V, V GS =0V 1 A Gate-Body Leakage Current (Note.2) I GSS V DS =0V, V GS =±20V ±10 uA Gate Threshold Voltage (Note.2) V GS(th) 1 1.6 2.5 V V GS =10V, I D =500mA 2 V GS =10V, I D =50mA 3 Forward Transfer Admittance (Note.2) | Y fs | V GS =10V, I D =200mA 80 ms Input Capacitance C iss Output Capacitance C oss Reverse Transfer Capacitance C rss Total Gate Charge Q g V GS =4.5V, V DS =15V, I D =200mA 0.8 nC Turn-On DelayTime t d(on) Turn-Off DelayTime t d(off) Static Drain-Source On-Resistance (Note.2) R DS(O n pF ns I D =200mA, V DS =30V, R G =10ȍ,V GEN =10V,R L =150ȍ V GS =0V, V DS =25V, f=1MHz Source Gate Protection Diode Gate Dr a in V DS = 10V, I D = 1mA 1.GATE 2.SOURCE 3.DRAIN Simplified outline(SOT-23) N-Channel Enhancement MOSFET Marking MARKING G uangDong YFW Electronics Co, Ltd.
2 / 4 www.yfwdiode.com 0.2 0.4 0.6 0.8 1.0 01 2 3 4 5 V DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics DS )A(TNERRUC NIARD I D 1.2 1.4 10V V = 10V GS V , GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics GS 0.01 0.10 1. 00 1 1.5 2 2.5 33 . 54 4.5 5 D )A(TNERRUC NIARD T = 125 C A T= 2 5 C A T = -25 C A T= 7 5 C A V = 10V Pulsed DS T , CHANNEL TEMPERATURE (°C) Fig. 3 Gate Threshold Voltage vs. Channel Tem perature ch 0.5 1.5 -50 -25 0 25 50 75 100 125 150 )V( EGATLOV DLOHSERHT ETAG V ,)ht(SG V = 10V I = 1mA Pulsed DS D 0.1 I DRAIN CURRENT (A) Fig. 4 Static Drain-Source On-Resistance Vs. Drain Current D 0.001 0.01 0.1 1 T= 1 5 0 C A T= 1 2 5 C A T= 8 5 C A T= - 5 5 C A T = 25 C A ° T= 0 C A ° T= - 2 5 C A V = 10V Pulsed GS I , DRAIN CURRENT (A) Fig. 5 Static Drain-Source On-Resistance vs. Drain Current D 0.1 0.001 0.01 0.1 V= 5 V Pulsed GS T= 1 5 0 C A T= 1 2 5 C A T= 8 5 C A T= - 5 5 C A T= 2 5 C A ° T= - 2 5 C A T= 0 C A V GATE SOURCE VOLTAGE (V) Fig. 6 Static Drain-Source On-Resistance vs. Gate-Source Voltage GS, 0 2 4 6 8 10 12 14 16 18 20 I = 300mA D I = 150mA D T = 25 C Pulsed A Typical Characteristics G uangDong YFW Electronics Co, Ltd.
3 / 4 www.yfwdiode.com )A( TNERRUC NIARD ESREVER, I RD 0.001 0.01 0.1 0 0.5 1 1.5 Fig. 8 Reverse Drain Current vs. Source-Drain Voltage SD SOURCE-DRAIN VOLTAGE (V) V= 0 V Pulsed GS T = -55 C A T = 150 C A T = 125 C A T = 85 C A T = 25 C A T= 0 C A T = -25 C A Tch, CHANNEL TEMPERATURE ( C) Fig. 7 Static Drain-Source On-State Resistance vs. Channel Tem perature 0.5 1.5 2.5 -75 -50 -25 02 5 50 75 100 125 150 V = 10V Pulsed GS I = 300mA D I = 150mA D I , DRAIN CURRENT (A) D Fig.10 Forward Transfer Admittance vs. Drain Current )S( ECNATTIMDA REFSNART DRA WROF,| sf 0.001 0.01 0.1 0.001 0.01 0.1 V = 10V Pulsed GS T= 2 5 C A A -55 C° A 150 C° A 85 C° 0.001 0.01 0.1 0 0.5 )A( TNERRUC NIARD ESREVER, I RD Fig. 9 Reverse Drain Current vs. Source-Drain Voltage SD SOURCE-DRAIN VOLTAGE (V) V= 0 V GS V = 10V GS T = 25°C Pulsed A G uangDong YFW Electronics Co, Ltd.
4 / 4 www.yfwdiode.com SOT-23 SOT-23 3000Tape/Reel,7”reel Package Outline Summary of Packing Options Package Packing Description Packing Quantity Industry Standard EIA-481-1 UNIT A max. b p cD E e H E L p Qw v mm 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 0.95 e 1.9 2.5 2.1 0.55 0.45 0.10.2 DIMENSIONS (mm are the original dimensions) 0.45 0.15 bp D e A Lp Q detail X H E E w M v M A B A B 0 1 2 mm scale A 1.1 0.9 c X G uangDong YFW Electronics Co, Ltd.