2N7002K

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Document number: DS30896 Rev. 20 - 2 1 of 8 www.diodes.com July 2024 © 2024 Copyright Diodes Incorporated. All Rights Reserved. 2N7002K N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS RDS(ON) Max ID Max TA = +25°C 60V 2Ω @ VGS = 10V 380mA 3Ω @ VGS = 5V 310mA Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.

  • Motor controls
  • Power-management functions
  • Backlighting Features and Benefits
  • Low On-Resistance
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • ESD Protected up to 2kV
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www.diodes.com/quality/product-definitions/
  • An automotive-compliant part is available under separate datasheet (2N7002KQ) Mechanical Data
  • Package: SOT23
  • Package Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0
  • Moisture Sensitivity: Level 1 per J-STD-020
  • Terminals: Finish ⎯ Matte Tin Annealed over Alloy 42 Leadframe. Solderable per MIL-STD-202, Method 208
  • Weight: 0.008 grams (Approximate) Ordering Information (Note 4) Part Number Package Packing Qty. Carrier 2N7002K-7 SOT23 (Standard) 3,000 Tape & Reel 2N7002K-13 SOT23 (Standard) 10,000 Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen - and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes -packaging/. D G S D S G Gate Protection Diode SOT23 (Standard) Top View ESD protected up to 2kV Top View Equivalent Circuit

Document number: DS30896 Rev. 20 - 2 2 of 8 www.diodes.com July 2024 © 2024 Copyright Diodes Incorporated. All Rights Reserved. 2N7002K Marking Information Date Code Key Year 2006 - 2024 2025 2026 2027 2028 2029 2030 2031 2032 2033 Code T - L M N P R S T U V W Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D Maximum Ratings (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Note 6) VGS = 10V Steady State TA = +25°C TA = +70°C ID 380 300 mA t<5s TA = +25°C TA = +70°C ID 430 340 mA Continuous Drain Current (Note 6) VGS = 5V Steady State TA = +25°C TA = +70°C ID 310 240 mA t<5s TA = +25°C TA = +70°C ID 350 270 mA Maximum Continuous Body Diode Forward Current (Note 6) IS 0.5 A Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) (Note 6) IDM 1.2 A Thermal Characteristics (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Unit Total Power Dissipation (Note 5) PD 370 mW Thermal Resistance, Junction to Ambient (Note 5) Steady State RθJA 357 ° C/W t<5s 292 Total Power Dissipation (Note 6) PD 540 mW Thermal Resistance, Junction to Ambient (Note 6) Steady State RθJA 240 ° C/W t<5s 197 Thermal Resistance, Junction to Case (Note 6) RθJC 91 Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. copper, single sided. K7K = Product Type Marking Code YM = Date Code Marking Y or Y or Y= Year (ex: L = 2024) M or M = Month (ex: 9 = September)

Document number: DS30896 Rev. 20 - 2 3 of 8 www.diodes.com July 2024 © 2024 Copyright Diodes Incorporated. All Rights Reserved. 2N7002K Electrical Characteristics (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS 60 — — V VGS = 0V, ID = 10µA Zero Gate Voltage Drain Current IDSS — — 1.0 µA VDS = 60V, VGS = 0V Gate-Source Leakage IGSS — — ± 10 µA VGS = ± 20V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(TH) 1.0 1.6 2.5 V VDS = 10V, ID = 1mA Static Drain-Source On-Resistance RDS(ON) — 1.2 1.4 2.0 3.0 Ω VGS = 10V, ID = 0.5A VGS = 5V, ID = 0.05A Forward Transfer Admittance |Yfs| 80 — — ms VDS =10V, ID = 0.2A Diode Forward Voltage VSD — 0.75 1.1 V VGS = 0V, IS = 115mA DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss — 30 50 pF VDS = 25V, VGS = 0V f = 1.0MHz Output Capacitance Coss — 4.2 25 pF Reverse Transfer Capacitance Crss — 2.9 5.0 pF Gate Resistance Rg — 133 — Ω f = 1MHz , VGS = 0V, VDS = 0V Total Gate Charge Qg — 0.3 — nC VGS = 4.5V, VDS = 10V, ID = 250mA Gate-Source Charge Qgs — 0.2 — nC Gate-Drain Charge Qgd — 0.08 — nC Turn-On Delay Time tD(ON) — 3.9 — ns VDD = 30V, VGS = 10V, RG = 25Ω, ID = 200mA Turn-On Rise Time tR — 3.4 — ns Turn-Off Delay Time tD(OFF) — 15.7 — ns Turn-Off Fall Time tF — 9.9 — ns Notes: 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing.

Document number: DS30896 Rev. 20 - 2 4 of 8 www.diodes.com July 2024 © 2024 Copyright Diodes Incorporated. All Rights Reserved. 2N7002K 0.2 0.4 0.6 0.8 1.0 0 1 2 3 4 5 V , DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics DS I , DRAIN CURRENT (A)D V , GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics GS T , CHANNEL TEMPERATURE ( 癈) Fig. 3 Gate Threshold Voltage vs. Channel Temperature ch 0.5 1.5 -50 -25 0 25 50 75 100 125 150 0.1 I , DRAIN CURRENT (A) Fig. 4 Static Drain-Source On-Resistance vs. Drain Current D I , DRAIN CURRENT (A) Fig. 5 Static Drain-Source On-Resistance vs. Drain Current D V GATE SOURCE VOLTAGE (V)GS, Fig. 6 Static Drain-Source On-Resistance vs. Gate-Source Voltage (°C)

Document number: DS30896 Rev. 20 - 2 5 of 8 www.diodes.com July 2024 © 2024 Copyright Diodes Incorporated. All Rights Reserved. 2N7002K t1, PULSE DURATION TIME (sec) Fig. 12 Single Pulse Maximum Power Dissipation 0.001 0.01 0.1 1 10 100 1,0000.0001 Single Pulse R = 240 C/W R = r * R T - T = P * R JA JA(t) (t) JA J A JA(t) P , PEAK TRANSIENT POIWER (W)(PK) T , CHANNEL TEMPERATURE ( C) Fig. 7 CH ° Static Drain-Source On-State Resistance vs. Channel Temperature I , REVERSE DRAIN CURRENT (A)DR I , REVERSE DRAIN CURRENT (A)DR I , DRAIN CURRENT (A)D Fig.10 Forward Transfer Admittance vs. Drain Current |Y |, FORWARD TRANSFER ADMITTANCE (S)fs 0.001 0.01 0.1 1 10 100 ID, DRAIN CURRENT (A) VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 11 SOA, Safe Operation Area TJ(Max) = 150℃ TA = 25℃ Single Pulse DUT on MRP VGS = 10V RDS(ON) Limited DC PW = 100ms PW = 10s PW = 1ms PW = 100µs PW = 10µs PW = 1µs PW = 10ms PW = 1s P(PK), PEAK TRANSIENT POWER (W)

Document number: DS30896 Rev. 20 - 2 6 of 8 www.diodes.com July 2024 © 2024 Copyright Diodes Incorporated. All Rights Reserved. 2N7002K t1, PULSE DURATION TIME (sec) Fig. 13 Transient Thermal Resistance 0.00001 0.001 0.01 0.1 r(t), TRANSIENT THERMAL RESISTANCE R = r * RJA(t) (t)  JA JAR = 240 C/W Duty Cycle, D = t1/t2 D = 0.5 D = 0.7 D = 0.9 D = 0.3 D = 0.1 D = 0.05 D = 0.02 D = 0.01 D = 0.005 D = Single Pulse

Document number: DS30896 Rev. 20 - 2 7 of 8 www.diodes.com July 2024 © 2024 Copyright Diodes Incorporated. All Rights Reserved. 2N7002K Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 (Standard) SOT23 (Standard) Dim Min Max Typ A 0.90 1.15 1.025 A1 0.00 0.10 0.05 A2 0.85 1.10 0.975 b 0.30 0.51 0.40 c 0.080 0.202 0.11 D 2.80 3.00 2.90 E 2.25 2.55 2.40 E1 1.20 1.40 1.30 e 0.89 1.03 0.915 e1 1.78 2.05 1.83 F 0.40 0.60 0.535 L1 0.45 0.61 0.55 L 0.25 0.55 0.40 a 0° 8° -- All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 (Standard) Dimensions Value (in mm) C 2.0 X 0.8 X1 1.35 Y 0.9 Y1 2.9 A A2 L GAUGE PLANE 0.25 D L1b E E1 e e1F a c X Y Y1 C

Document number: DS30896 Rev. 20 - 2 8 of 8 www.diodes.com July 2024 © 2024 Copyright Diodes Incorporated. All Rights Reserved. 2N7002K IMPORTANT NOTICE 1. DIODES INCORPORATED (Diodes) AND ITS SUBSIDIARIES MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON -INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes ’ products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who d esign with Diodes’ products. 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