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  • Manufacturer or author: Provided By digicamel.com
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PAGE . 1October 29,2010-REV.02 2N7002K 60V N-Channel Enhancement Mode MOSFET - ESD Protected Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) Note: 1. Maximum DC current limited by the package 2. Surface mounted on FR4 board, t < 5 sec PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE PARAMETER Symbol Limit Units Drain-Source Voltage V DS 60 V Gate-Source Voltage V GS +20 V Continuous Drain Current ID 300 mA Pulsed Drain Current 1) IDM 2000 mA Maximum Power Dissipation TA =25 OC TA =75 OC P D 350 210 mW Operating Junction and Storage T emperature Range TJ ,T STG -55 to + 150 OC Junction-to Ambient Thermal Resistance(PCB mounted)2 RθJA 357 OC/W

FEATURES

  • RDS(ON), VGS@10V,IDS@500mA=3Ω
  • RDS(ON), VGS@4.5V,IDS@200mA=4Ω
  • Advanced Trench Process Technology
  • High Density Cell Design For Ultra Low On-Resistance
  • Very Low Leakage Current In Off Condition
  • Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
  • ESD Protected 2KV HBM
  • Lead free in comply with EU RoHS 2011/65/EU directives
  • Green molding compound as per IEC61249 Std. . (Halogen Free) MECHANICAL
  • Case: SOT-23 Package
  • Terminals : Solderable per MIL-STD-750,Method 2026
  • Apporx. Weight: 0.0003 ounces, 0.0084 grams
  • Marking : K72 DATA SOT-23 Unit inch(mm)： 0.120(3.04) 0.110(2.80) 0.056(1.40) 0.047(1.20) 0.079(2.00) 0.070(1.80) 0.020(0.50) 0.013(0.35) 0.044(1.10) 0.035(0.90) 0.008(0.20) 0.003(0.08) 0.004(0.10) 0.000(0.00)

PAGE . 2October 29,2010-REV.02

ELECTRICAL CHARACTERISTICS

Parameter Symbol T est Condition Min. Typ. Max. Units Static Drain-Source Breakdown Voltage BV DSS V GS =0V , I D=10 μA6 0 - - V Gate Threshold Voltage V GS(th) V DS =V GS , I D =250 μA1 - 2 . 5 V Drain-Source On-State Resistance R DS(on) VGS=4.5V , I D=200mA - - 4.0 Ω Drain-Source On-State Resistance R DS(on) VGS=10V , I D=500mA - - 3.0 Zero Gate Voltage Drain Current I DSS VDS=60V , VGS=0V --1 μA Gate Body Leakage IGSS V GS =+ 20V , V DS =0V - - + 10 μA Forward Transconductance gfS V DS =15V , I D =250mA 100 - - mS Dynamic T otal Gate Charge Qg V DS =15V, I D =200mA VGS=5V -- 0 . 8 n C Turn-On Ti me ton VDD=30V , RL=150Ω ID=200mA , VGEN=10V RG=10Ω -- 2 0 ns Turn-Off Ti me t off -- 4 0 Input Capacitance C iss V DS =25V , V GS =0V f=1.0MH Z -- 3 5 pFOutput Capacitance C oss -- 1 0 Reverse Transfer Capacitance C rss --5 Source-Drain Diode Diode Forward Voltage V SD IS=200mA , VGS=0V - 0.82 1.3 V Continuous Diode Forward Current I S - - - 300 mA Pulse Diode Forward Current ISM - - - 2000 mA 2N7002K

PAGE . 3October 29,2010-REV.02 Fig. 1-TYPICAL FORWARD CHARACTERISTICFIG.1- Output Characteristic Typical Characteristics Curves (T =25 C,unless otherwise noted)A O FIG.2- Transfer Characteristic FIG.3- On Resistance vs Drain Current FIG.4- On Resistance vs Gate to Source Voltage FIG.5- On Resistance vs Junction Temperature VDS - Drain-to-Source Voltage (V) ID -Drain -to -Source Current (A) VGS - Gate-to-Source Voltage (V) ID -Drain Source Current (A) ID - Drain Current (A) RDS(ON)-On-Resistance ()/c87 VGS - Gate-to-Source Voltage (V) RDS(ON) - On-Resistance ()/c87 TJ - Junction Temperature ( oC) RDS(ON) - On-Resistance(Normalized) 0.2 0.4 0.6 0.8 1.2 012345 VGS= 6.0~10V 5.0V 4.0V 3.0V 0.2 0.4 0.6 0.8 1.2 0123456 VDS =10V 25oC 0 0.2 0.4 0.6 0.8 1 VGS =4 . 5 V VGS=10V 23456789 1 0 ID =200mA ID =500mA 0.6 0.8 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 VGS =10V ID =500mA 2N7002K

PAGE . 4October 29,2010-REV.02 Fig.6 - Gate Charge Waveform Fig.8 - Threshold Voltage vs Temperature Fig.7 - Gate Charge Fig.9 - Breakdown Voltage vs Junction Temperature Fig.10 - Source-Drain Diode Forward Voltage QgdQgs Qg QswVgs(th) Vgs Qg Qg(th) Qg - Gate Charge (nC) VGS - Gate-to-Source Voltage (V) TJ - Junction Temperature ( C) Vth - G-S Threshold Voltage (NORMALIZED) TJ - Junction Temperature ( oC) BVDSS - Breakdown Voltage (V) VSD - Source-to-Drain Voltage (V) IS - Source Current (A) Fig.11 - Capacitance vs Drain to Source Voltage VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) 0 0.2 0.4 0.6 0.8 1 VDS=10V ID =250mA -50 -25 0 25 50 75 100 125 150 ID = 250 A/c109 0.7 0.8 0.9 1.1 1.2 -50 -25 0 25 50 75 100 125 150 ID =250 A/c109 0.01 0.1 VGS =0 V 25oC -55oC TJ =1 2 5oC 0 5 10 15 20 25 Ciss f=1 M H z VGS =0 V Crss Coss 2N7002K

PAGE . 5October 29,2010-REV.02 MOUNTING PAD LAYOUT l

  • Packing information T/R - 12K per 13" plastic Ree T/R - 3K per 7” plastic Reel ORDER INFORMATION SOT-23 0.031 MIN. (0.80) MIN. 0.037 (0.95) 0.035 MIN. (0.90) MIN. 0.043 (1.10) 0.106 (2.70) Unit inch(mm)： 2N7002K

PAGE . 6 2N7002K October 29,2010-REV.02 Part No_packing code_Version 2N7002K_R1_00001 For example : RB500V-40_R2_00001 2N7002K_R2_00001 Part No. Serial number Version code means HF Packing size code means 13" Packing type means T/R Packing Code XX Version Code XXXXX Packing type 1st Code Packing size code 2nd Code HF or RoHS 1st Code 2nd~5th Code Tape and Ammunition Box (T/B) A N/A 0 HF 0 serial number Tape and Reel (T/R) R 7" 1 RoHS 1 serial number Bulk Packing (B/P) B 13" 2 Tube Packing (T/P) T 26mm X Tape and Reel (Right Oriented) (TRR) S 52mm Y Tape and Reel (Left Oriented) (TRL) L PANASERT T/B CATHODE UP (PBCU) U FORMING F PANASERT T/B CATHODE DOWN (PBCD) D

PAGE . 7 Disclaimer

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  • Applications shown on the herein document are exa mples of standard use and operation. Customers are responsible in comprehending the suitable use in particular a pplications. Panjit International Inc. makes no representation or warranty that such a pplications will be suitable for the specified use without further testing or modification.
  • The products shown herein are not designed and authorized for equipments requiring high level of reliability or relating to huma n life and for any applications concerning life-saving or life-sustaining, such a s medical instruments, transportation equipment, aerospace machinery et cetera. Customers using or selling the se products for use in such a pplications do so at their own risk and agree to fully inde mnify Panjit International Inc. for any damages resulting from such improper use or sale.
  • Since Panjit uses lot number as the tracking base, please provide the lot number for tracking when complaining. 2N7002K October 29,2010-REV.02