2N7002K KEC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 4
Technical content
- 11. 17 1/4 SEMICONDUCTOR TECHNICAL DATA 2N7002K N Channel MOSFET ESD Protected 2000V Revision No : 2 INTERFACE AND SWITCHING APPLICATION.
FEATURES
ESD Protected 2000V. High density cell design for low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. High saturation current capablity. MAXIMUM RATING (Ta=25 DIM MILLIMETERS 1. SOURCE 2. GATE 3. DRAIN SOT-23 A B C D E 2.93 0.20 1.30+0.20/-0.15 0.45+0.15/-0.05 2.40+0.30/-0.20 G 1.90 H J K L M N 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55
0.20 MIN
1.00+0.20/-0.10 M J K E 2 3 H G A N C B D 1.30 MAX LL PP ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=10 A 60 - - V Zero Gate Voltage Drain Current IDSS VDS=60V, VGS=0V - - 1 A Gate-Body Leakage, Forward IGSSF VGS=20V, VDS=0V - - 10 A Gate-Body Leakage, Reverse IGSSR VGS=-20V, VDS=0V - - -10 A G D S Type Name Marking Lot No. WC EQUIVALENT CIRCUIT CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS 20 V Drain Current Continuous ID 300 mA Pulsed (Note 1) IDP 1200 Drain Power Dissipation (Note 2) PD 300 mW Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 Note 1) Pulse Width , Duty Cycle Note 2) Package mounted on a glass epoxy PCB(100mm2 1mm)
- 11. 17 2/4 2N7002K Revision No : 2 ELECTRICAL CHARACTERISTICS (Ta=25 ON CHARACTERISTICS (Note 3) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Gate Threshold Voltage Vth VDS=VGS, ID=250 A 1.1 - 2.35 V Drain-Source ON Resistance RDS(ON) VGS=10V, ID=500mA - 1.2 1.8 VGS=5V, ID=50mA - 1.5 2.1 Drain-Source ON Voltage VDS(ON) VGS=10V, ID=500mA - 0.6 0.9 V VGS=5V, ID=50mA - 0.075 0.105 On State Drain Current ID(ON) VGS=10V, VDS=
2 VDS(ON) 500 - - mA
Forward Transconductance gFS VDS=10V, ID=500mA 200 580 - mS Drain-Source Diode Forward Voltage VSD VGS=0V, IS=200mA (Note1) - 760 1150 mV DYNAMIC CHARACTERISTICS CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Input Capacitance Ciss VDS=25V, VGS=0V, f=1MHz - 52.1 - pFReverse Transfer Capacitance Crss - 3.9 - Output Capacitance Coss - 7.7 - Switching Time Turn-On Time ton VDD=30V, RL=155 , ID=190mA, VGS=10V - 11.1 - nS Turn-Off Time toff - 22.5 - G D VOUT VDD VIN VGS S RL Note 3) Pulse Test : Pulse Width , Duty Cycle OUTPUT PULSE WIDTH INVERTED trtd(on) 10% 90%90% 90% 10% 50%50% ton tf td(off) toff INPUT VOUT VIN SWITCHING TIME TEST CIRCUIT
- 11. 17 3/4 2N7002K Revision No : 2 DRAIN CURRENT ID (A) ID - VDS 0.0 0.0 0.3 0.6 0.9 1.2 1.5 0.0 1.0 2.0 3.0 4.0 6.0 5.0 DRAIN-CURRENT ID (A)DRAIN-SOURCE VOLTAGE VDS (V) RDS(ON) - ID -100 0.0 0 50 100-50 150 1.0 0.5 1.5 2.0 3.0 2.5 COMMON SOURCE VDS =10V COMMON SOURCE Ta = 25 C COMMON SOURCE Ta = 25 C VGS = 3V 6V 7V 10VVGS = 3V 10V DRAIN SOURCE ON - RESISTANCE RDS ( ) 0.0 0.2 0.4 0.6 0.8 1.0 012345 DRAIN-SOURCE VOLTAGE VGS (V) ID - VGS DRAIN CURRENT ID (A) RDS(ON) - Tj DRAIN SOURCE ON - RESISTANCE RDS ( ) JUNCTION TEMPERATURE Tj ( )C -55 C 125 C 25 C BODY DIODE FORWARD VOLTAGE VSD (V) REVERSE DRAIN CURRENT I (A)S I - VSS D 0.01 0.0 0.1 V =1VGS 4.0 3.5 -100 0.6 0 50 100-50 150 0.8 0.7 0.9 1.2 1.1 Vth - Tj NORMALIZED GATE GATE SOURCE THRESHOLDVOLTAGE Vth (V) JUNCTION TEMPERATURE Tj ( )C 1.4 1.3 Common Source VGS=VDS ID=250 Aµ VGS=5V ID=50mA VGS=10V ID=500mA V =0VGS
- 11. 17 4/4 2N7002K Revision No : 2 100 1000 051 0 1 5 20 25 DRAIN-SOURCE VOLTAGE V (V) CAPACITANCE C (pF) C - VDS DSGATE CHARGE Q (nC) GATE-SOURCE VOLTAGE V (V)GS g V - QGS g 2 468 1 0 Ciss ossC C rss COMMON SOURCE Ta=25 C f=1MHz V =0VGS COMMON SOURCE VDS=30V ID=0.3A Ta=25 C P - TaD AMBIENT TEMPERATURE Ta ( C) 02 0 4 0 D DRAIN POWER DISSIPATION P (mW) 60 80 100 120 140 160 100 150 200 250 300 350 SOA DSDRAIN-SOURCE VOLTAGE V (V) DRAIN CURRENT I (A) D 0.001 0.01 10 100 10.1 0.0001 0.001 0.01 0.1 PW =10ms PW =100ms PW =1ms DC Tj=150 , Ta=25 ,Single Pulse,Package mounted on a a glass epoxy PCB(100mm 2 1mm) C C PW 10