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Document overview

• Manufacturer or author: Provided By digicamel.com
• PDF pages: 4

Technical content

0.3A , 60V , RDS(ON) 4  N-Ch Small Signal MOSFET with ESD Protection Elektronische Bauelemente 30-Mar-2011 Rev. A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Top View A L C B D G H JF K E 1 2 SOT-23 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free

FEATURES

 RDS(ON), VGS@10V, IDS@500mA=3  RDS(ON), VGS@4.5V, IDS@200mA=4  Advanced Trench Process Technology  High Density Cell Design For Ultra Low On-Resistance  Very Low Leakage Current In Off Condition  Specially Designed for Battery Operated Systems, Solid-State Relays Drivers：Relays, Displays, Lamps, Solenoids, Memories, etc.  ESD Protected 2KV HBM  In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA  Case: SOT-23 Package  Terminals: Solderable per MIL-STD-750, Method 2026  Approx. Weight: 0.008 gram MARKING K72

PACKAGE INFORMATION

SOT-23 3K 7’ inch ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage V GS ±20 V Continuous Drain Current ID 300 mA Pulsed Drain Current 1 IDM 2000 mA Maximum Power Dissipation TA=25°C PD 0.35 W TA=75°C 0.21 Thermal Resistance Junction-Ambient (PCB mounted) 2 R JA 357 °C/W Operating Junction and Storage Temperature T J, TSTG -55 ~ +150 °C Notes: 1. Maximum DC current limited by the package. 2. Surface mounted on FR4 board, t < 5sec. REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 2.80 3.04 G 0.09 0.18 B 2.10 2.55 H 0.45 0.60 C 1.20 1.40 J 0.08 0.177 D 0.89 1.15 K 0.6 REF. E 1.78 2.04 L 0.89 1.02 F 0.30 0.50 Gate Source Drain

0.3A , 60V , RDS(ON) 4  N-Ch Small Signal MOSFET with ESD Protection Elektronische Bauelemente 30-Mar-2011 Rev. A Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Static Drain-Source Breakdown Voltage BV DSS 60 - - V VGS =0, ID =10μA Gate-Threshold Voltage V GS(th) 1 - 2.5 V VDS = VGS, ID =250μA Drain-Source On-Resistance r DS(ON) - - 4 Ω VGS =4.5V, ID =200mA - - 3 VGS =10V, ID =500mA Zero Gate Voltage Drain Current I DSS - - 1 μA VDS =60V, VGS =0 Gate-Body Leakage Current I GSS - - ±10 μA VDS = 0, VGS = ±20V Forward Transconductance g fs 100 - - mS VDS = 15V, ID =250 mA Dynamic Total Gate Charge Q g - - 0.8 nC VDS=15V, VGS=5V, ID=200mA Turn-On Time t (on) - - 20 nS VDD=30V, RL=150Ω, ID=200mA, VGEN=10V, RG=10Ω Turn-Off Time t (off) - - 40 Input Capacitance C iss - - 35 pF VDS=25V, VGS=0, f=1MHz Output Capacitance C oss - - 10 Reverse Transfer Capacitance C rss - - 5 Source-Drain Diode Diode Forward Voltage V SD - 0.82 1.3 V IS=200mA, VGS=0 Continuous Diode Forward Current I S - - 300 mA Pulse Diode Forward Current I SM - - 2000 mA

0.3A , 60V , RDS(ON) 4  N-Ch Small Signal MOSFET with ESD Protection Elektronische Bauelemente 30-Mar-2011 Rev. A Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVE FIG.1‐Ouput Characteristic FIG.2‐Transfer Characteristic FIG.3‐On Resistance vs Drain Current FIG.5‐On Resistance vs Junction Temperature FIG.4‐On Resistance vs Gate to Source Voltage

0.3A , 60V , RDS(ON) 4  N-Ch Small Signal MOSFET with ESD Protection Elektronische Bauelemente 30-Mar-2011 Rev. A Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVE FIG.6‐Gate Charge Waveform FIG.10‐Source‐Drain Diode Forward Voltage FIG.9‐Breakdown Voltage vs Junction TemperatureFIG.8‐Threshold Voltage vs Temperature FIG.7‐Gate Charge