Summary
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. Rev. 03-28 April 2006
Description
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. Rev. 03-28 April 2006
Source title
2N7002F Datasheet(PDF) - NXP Semiconductors