2N7002E-3 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
Features
Low On-Resistance: RDS(ON) Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Marking Marking 703 Electrical Characteristics Ta = 25 tinUxaMpyTniMsniotidnoctseTlobmySretemaraP Drain-Source Breakdown Voltage VDSS VGS = 0V, ID = 100u A 60 70 V Zero Gate Voltage Drain Current @ TC = 25 1.0 @ TC = 125 500 IegakaeLydoB-etaG GSS VGS = 15V, VDS = 0V 10 uA VegatloVdlohserhTetaG GS(th) VDS = VGS, ID = 250 uA 1.0 2.5 V VGS = 10V, ID 36.1Am052= VGS = 4.5V, ID 40.2Am002= ItnerruCniarDetatS-nO D(ON) VGS = 10V, VDS = 7.5V 0.8 1.0 A gecnatcudnocsnarTdrawroF FS VDS =10V, ID = 0.2A 80 mS CecnaticapaCtupnI iss 22 50 pF CecnaticapaCtuptuO oss 11 25 pF CecnaticapaCrefsnarTesreveR rss 2.0 5.0 pF temiTyaleDnO-nruT D(ON) 7.0 20 ns temiTyaleDffO-nruT D(OFF) 11 20 ns Static Drain-Source On-Resistance @ Tj = 25 IDSS VDS = 60V, VGS = 0V VDD = 30V, ID = 0.2A,RL = 150 ,VGEN = 10V,RGEN = 25 A RDS (ON) VDS = 25V, VGS = 0V,f = 1.0MHz Absolute Maximum Ratings Ta=25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 60 Drain-Gate Voltage RGS≤1.0MΩ VDGR 60 Gate-Source Voltage -Continuous ±20 -Pulsed ±40 Continuous Drain Current ID 240 mA Power Dissipation PD 300 mW Thermal Resistance.Junction- to-Ambient RthJA 417 ℃/W Junction Temperature TJ 150 Junction and Storage Temperature Range Tstg -55 to 150 VGS V N-Channel Enhancement MOSFET 0.4+0.1 -0.1 2.9+0.2 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.2 2.8 +0.2 -0.1 +0.2 -0.1 1 2 Unit: mmSOT-23-3 1.6 0.4 0.15 +0.02 -0.02 0.55 0-0.1 0.68 +0.1 -0.1 1.1 +0.2 -0.1
www.kexin.com.cn2 MOSFET 2N7002E ■ Typical Characterisitics 0.2 0.4 0.6 0.8 1.0 0 1 2 3 4 5 I , DRAIN-SO URCE CURRENT (A)D V , DRAIN-SOURCE VOLTAGE (V)DS Fig. 1 On-Region Characteristics V = 10V G S 9.0V 8.0V 7.0V 6.5V 6.0V 5.5V 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V 2.1V 5.5V 10V 5.0V 2.1V 0 V , GATE TO SOURCE VOLTAGE (V)GS Fig. 2 Drain Current vs. Gate-Source Voltage 0.4 0.8 1.2 1.6 2.0 0 1 2 3 4 5 6 7 I , DRAIN CURRENT (A)D T = -55°CA T = 125°CA T = 25°CA 0 2 4 6 8 10 R - DRAIN-SO URCE-O N-RESISTANCE (W )DS(ON), V - GATE TO SOURCE VOLTAGE (V)GS Fig. 3 On Resistance vs. Gate to Source Voltage I = 75mAD I = 250mAD R DRAIN-SO URCE-ON-RESISTANCE (W )DS(ON), I , DRAIN CURRENT (A)D Fig. 4 On Resistance vs. Drain Current V = 4.5VGS V = 10VGS T , JUNCTION TEMPERATURE (°C)J Fig. 5 On-Resistance vs. Junction Temperature V = 4.5V @ 200m AGS -75 -50 -25 0 25 50 75 100 125 150 R , DRAIN-SO URCEDS(ON) O N-RESISTANCE ( )W V = 10V @ 250m AGS 100 25 50 75 100 125 150 175 200 P , PO W ER DISSIPATION (mW )D T , AMBIENT TEMPERATURE (°C)A Fig. 6, Max Power Dissipation vs Ambient Temperature 150 200 250 300 350