DATASHEET SEARCH SITE

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 3

Technical content

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Voltage - 60 Volts Drain Curreent - 115 mAmps

FEATURES

  • Low On-Resistance: R
  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • ESD Protected :1000V
  • Case: SOT-23, Molded Plastic
  • Case Material - UL Flammability Rating Classification 94V-0
  • Terminals: Solderable per MIL-STD-202, Method 208
  • Marking: Device Code
  • Weight: 0.008 grams (approx.)
  • ℃
  • THERMAL CHARACTERISTICS MAXIMUM RATING (Ta = 25 ) A E J L M B C H G D K TOP VIEW D SG SOT-23 Dim Min Max A 0.37 0.51 B 1.19 1.40 C 2.10 2.50 D 0.89 1.05 E 0.45 0.61 G 1.78 2.05 H 2.65 3.05 J 0.013 0.15 K 0.89 1.10 L 0.45 0.61 M 0.076 0.178 All Dimensions in mm DS(ON) Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage (RGS = 1.0 MΩ) VDGR 60 Vdc Drain Current – Continuous TC = 25°C (Note 1.) – Continuous TC = 100°C (Note 1.) – Pulsed (Note 2.) ID ID IDM mAdc Gate–Source Voltage – Continuous – Non–repetitive (tp ≤ 50 µs) VGS VGSM Vdc Vpk Characteristic Symbol Max Unit Total Device Dissipation FR–5 Board (Note 3.) TA = 25°C Derate above 25°C PD 225 1.8 mW mW/°C Thermal Resistance, Junction to Ambient RθJA 556 °C/W Total Device Dissipation Alumina Substrate,(Note 4.) TA = 25°C Derate above 25°C PD 300 2.4 mW mW/°C Thermal Resistance, Junction to Ambient RθJA 417 °C/W Junction and Storage Temperature TJ, Tstg -55 to +150 1. The Power Dissipation of the package may result in a lower continuous draincurrent. 2. Pulse Test: Pulse Width≤ 300µs, Duty Cycle≤ 2.0%. ± 75 ± 800 ± 20 ± 40 ± 115 Simplified Schematic Gate Source Drain3 (Top View)

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Voltage - 60 Volts Drain Curreent - 115 mAmps ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0, ID = 10µAdc) V(BR)DSS 60 – – Vdc Zero Gate Voltage Drain Current TJ = 25°C (VGS = 0, VDS T)cdV 06 = J = 125°C IDSS – 1.0 500 µAdc Gate–Body Leakage Current, Forward (VGS = 20 Vdc) IGSSF – – Gate–Body Leakage Current, Reverse (VGS = – 20 Vdc) IGSSR – – ON CHARACTERISTICS (Note 2.) Gate Threshold Voltage (VDS = VGS, ID = 250 µAdc) VGS(th) 1.0 1.6 2 Vdc On–State Drain Current (VDS ≥ 2.0 VDS(on), VGS = 10 Vdc) ID(on) 500 – – mA Static Drain–Source On–State Voltage (VGS = 10 Vdc, ID = 500 mAdc) (VGS = 5.0 Vdc, ID = 50 mAdc) VDS(on) 3.75 0.375 Vdc Static Drain–Source On–State Resistance (VGS = 10 V, ID = 500 mAdc) TC= 25°C TC = 125°C (VGS = 5.0 Vdc, ID = 50 mAdc) TC = 25°C TC = 125°C rDS(on) 1.4 1.8 7.5 13.5 7.5 13.5 Ohms Forward Transconductance (VDS ≥ 2.0 VDS(on), ID = 200 mAdc) gFS 80 – – mmhos DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Ciss – 17 50 pF Output Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Coss – 10 25 pF Reverse Transfer Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Crss – 2.5 5.0 pF SWITCHING CHARACTERISTICS (Note 2.) Turn–On Delay Time (VDD = 25 Vdc,I D 500 mAdc, td(on) – 7 20 ns Turn–Off Delay Time RG = 25Ω, RL= 50Ω, Vgen = 10 V) td(off) – 11 40 ns BODY–DRAIN DIODE RATINGS Diode Forward On–Voltage (IS = 115 mAdc, VGS = 0 V) VSD – – –1.5 Vdc Source Current Continuous (Body Diode) IS – – –115 mAdc Source Current Pulsed ISM – – –800 mAdc 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.

1 Adcµ

-1 Adcµ