2N7002_11 CENTRAL

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DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N7002 type is a N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. MARKING CODE: 702 MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Drain-Source Voltage V DS 60 V Drain-Gate Voltage V DG 60 V Gate-Source Voltage V GS 40 V Continuous Drain Current (TC=25°C) I D 115 mA Continuous Drain Current (TC=100°C) I D 75 mA Continuous Source Current (Body Diode) I S 115 mA Maximum Pulsed Drain Current I DM 800 mA Maximum Pulsed Source Current I SM 800 mA Power Dissipation P D 350 mW Operating and Storage Junction Temperature T J, Tstg -65 to +150 °C Thermal Resistance ΘJA 357 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS IGSSF V GS=20V 100 nA IGSSR VGS=20V 100 nA IDSS V DS=60V, VGS=0 1.0 μA IDSS V DS=60V, VGS=0, TA=125°C 500 μA ID(ON) VDS=10V, VGS=10V 500 mA BVDSS I D=10μA 60 105 V VGS(th) VDS=VGS, ID=250μA 1.0 2.1 2.5 V VDS(ON) VGS=10V, ID=500mA 3.75 V VDS(ON) VGS=5.0V, ID=50mA 0.375 V VSD VGS=0, IS=11.5mA 1.5 V rDS(ON) V GS=10V, ID=500mA 3.7 7.5 Ω rDS(ON) V GS=10V, ID=500mA, TA=100°C 13.5 Ω rDS(ON) V GS=5.0V, ID=50mA 6.2 7.5 Ω rDS(ON) V GS=5.0V, ID=50mA, TA=100°C 13.5 Ω gFS V DS=10V, ID=200mA 80 mS SOT-23 CASE R5 (31-January 2011) www.centralsemi.com

SOT-23 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Gate 2) Source 3) Drain MARKING CODE: 702 ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MAX UNITS Crss V DS=25V, VGS=0, f=1.0MHz 5.0 pF Ciss V DS=25V, VGS=0, f=1.0MHz 50 pF Coss VDS=25V, VGS=0, f=1.0MHz 25 pF ton VDD=30V, ID=200mA, RG=25Ω, RL=150Ω 20 ns toff VDD=30V, ID=200mA, RG=25Ω, RL=150Ω 20 ns www.centralsemi.com R5 (31-January 2011)