2N7002_04 PANJIT

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 3

Technical content

VOLTAGE 60 Volts CURRENT 200 mAmp N-channel enhancement mode field effect transistor,de- signed for high speed pulse amplifier and drive applica- tion,which is manufactured by the N-channel DMOS pr- ocess. High density cell design for low RDS(ON) V oltage controlled small signal switching. Rugged and reliabale. High saturation current capability. High-speed switching.CMOS logic compatible. CMOS logic compatible input. Not thermal runaway. No secondary breakdown. TA=25кUnless otherwise noted PARAMETER SYMBOL Value UNIT Drain-Source V oltage V DSS 60 V Drain-gate V oltage V DRG 60 V Gate-Source V oltage VGSS 20 V Maximum Drain Current-Continue -Pulse ID 200 800 mA Maximum power Dissipation Derating Above 25к PD 350 mW Operating and Storage Temperature Range TJ,TSTG -55 to +150 к Thermal Risistance,Junction-to-Ambient RӰJA 357 к/W 2N7002 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR F E A T U R E MECHANICS DATA ABSOLUTE MAXIMUM RATING DATA SHEET PAGE . 1STAD-SEP.14.2004 .119(3.00) .056(1.40) .047(1.20) .110(2.80) .066(1.70) .035(.90) .020(.50) .013(.35) .006(.15) MAX. .103 (2.60 .086 (2.20 .044(1.10) .002(.05) .007 (.20 )MIN. SOT-23 Unit: inch ( mm ) G Top View S D (Note1) Note: 1.Pulse Test: Pulse Width <300 us, Duty Cycle <2.0%. Both normal and Pb free product are available : Normal : 80~95% Sn, 5~20% Pb Pb free: 98.5% Sn above Marking Code: S72

PAGE . 2STAD-SEP.14.2004 TA=25кUnless otherwise noted PARAMETER SYMBOL CONDITION MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown V oltage BVDSS VGS=0V , ID=10ӴA 60 105 Ϋ V Zero Gate V oltage Drain Current IDSS VDS=60V , VGS=0V , TJ=25к VDS=60V , VGS=0V , TJ=125к ΫΫ 1.0 0.5 ӴA mA Gate-Body Leakage, Forward IGSSF VDS=0, VGS=20V ΫΫ 100 nA Gate-Body Leakage, Reverse IGSSR V DS=0, VGS=-20V ΫΫ -100 nA ON CHARACTERISTIC(note1) Gate Threshold V oltage VGS(th) VDS=VGS, ID=250ӴA 1 2.1 2.5 V Static Drain-Source On-Resisitance RDS(ON) VGS=10V , ID=500mA, TJ=25к Ϋ 3.7 7.5 Ө Drain-Source On-V oltage VDS(ON) VGS=10V , ID=500mA VGS=5.0V , ID=50mA ΫΫ 3.75 1.5 V On-State Drain Current I D(ON) VGS=10V , VDSЊ2VDS(ON) 500 ΫΫ mA Forward Transconductance GFS VDSЊ2VDS(ON), ID=200mA 80 ΫΫ mS DYNAMIC CHARACTERISTICS Input Capacitance CISS ΫΫ 50 pF Output Capacitance COSS ΫΫ 25 pF Reverse Transfer Capacitance CRSS VDS=25V , VGS=0V , F=1.0MHz ΫΫ 5 pF Turn-On Time TON ΫΫ 20 ns Turn-Off Time TOFF VDD=30V ,RL=25Ө, ID=500mA VGS=10V , RGEN=25Ө ΫΫ 20 ns ELECTRICAL CHRACTERISTICS