2N7002_12 UTC

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UNISONIC TECHNOLOGIES CO., LTD 2N7002 P o w e r M O S F E T www.unisonic.com.tw 1 of 6 Copyright © 2012 Unisonic Technologies Co., Ltd QW-R206-037,K 0.3A, 60V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 2N7002 uses advanced technology to provide excellent R DS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. „ FEATURES * High Density Cell Design for Low RDS(ON). * Voltage Controlled Small Signal Switch * Rugged and Reliable * High Saturation Current Capability „ SYMBOL „ ORDERING INFORMATION Ordering Number Package Pin Assignment Packing Lead Free Halogen Free 1 2 3 2N7002L-AE2-R 2N7002G-AE2-R SOT-23-3 S G D Tape Reel „ MARKING 3P G: Halogen Free L: Lead Free

UNISONIC TECHNOLOGIES CO., LTD 2 of 6 www.unisonic.com.tw QW-R206-037,K „ ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified.) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage V DSS 60 V Drain-Gate Voltage (RGS ≤1MΩ) V DGR 60 V Gate Source Voltage Continuous VGSS ±20 V Non Repetitive(tP<50μs) ±40 Drain Current Continuous ID 300 mA Pulsed 800 Power Dissipation PD 200 mW Derated Above 25°C 1.6 mW /°C Junction Temperature T J + 150 °C Storage Temperature T STG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. „ THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 625 °C/W Junction to Case θJC 215 °C/W „ ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS=0V, ID=10μA 60 V Drain-Source Leakage Current I DSS V DS=60V, VGS =0V 1 μA Gate-Source Leakage Current IGSSF V GS =20V, VDS=0V 100 nA IGSSR V GS =-20V, VDS=0V -100 nA ON CHARACTERISTICS (Note) Gate Threshold Voltage V GS(TH) V GS = VDS, ID=250μA 1 2.1 2.5 V Static Drain-Source On-Resistance R DS (ON) VGS =10V, ID=300mA 7.5 Ω VGS =5.0V, ID=50mA 7.5 Ω DYNAMIC CHARACTERISTICS Input Capacitance C ISS V DS=25V,VGS=0V,f=1.0MHz 20 50 pF Output Capacitance C OSS 11 25 pF Reverse Transfer Capacitance C RSS 4 5 pF Turn-On Time t ON VDD=30V, RL=150Ω, ID=200mA, VGS =10V, RGEN =25Ω 20 nS Turn-Off Time t OFF VDD=30V, RL=25Ω, ID=200mA, VGS=10V, RGEN =25Ω 20 nS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage V SD V GS=0V, Is=300mA (Note) 0.88 1.5 V Maximum Pulsed Drain-Source Diode Forward Current ISM 0.8 A Maximum Continuous Drain-Source Diode Forward Current IS 300 mA Note: Pulse Test: Pulse Width≤300μs, Duty Cycle≤2.0%

UNISONIC TECHNOLOGIES CO., LTD 3 of 6 www.unisonic.com.tw QW-R206-037,K „ TEST CIRCUIT AND WAVEFORM Fig. 1 VGS RGEN VDD VIN RL VOUT DUT G D S Pulse Width Input, VIN Output, VOUT tON tOFF tD(OFF)tRtD(ON) tF Inverted 10% 10%10% 50%50% 90% 90% 90% Fig. 2 Switching Waveforms

UNISONIC TECHNOLOGIES CO., LTD 4 of 6 www.unisonic.com.tw QW-R206-037,K „ TYPICAL CHARACTERISTICS Drain-Source Current, ID (A) Normalized Drain-Source ON-Resistance, RDS (ON)(Ω) 100750-25 1.5 -50 0.5 1.61.20.80.4 VGS=10V 2.5 1.5 0.5 25 50 150125 0.75 1.25 1.75 TJ=125°C 25°C Normalized Drain-Source ON- Resistance, RDS(ON)(Ω) Junction Temperature, TJ (°C) On-Resistance Varisation with Temperature VGS=10V ID=300mA Normalized Drain-Source ON- Resistance, RDS (ON)(Ω) Drain Current,ID (A) On-Resistance Varisation with Drain Current and Temperature 0 108642 100750-25-50 25 50 125 0.8 0.4 0.6 0.2 1.0 150 1.1 1.05 0.95 0.9 0.85 0.8 Drain Current, ID (A) Gate to Source Voltage, VGS (V) Transfer Characteristics VDS=10V 25°C 125°C Normalized Gate-Source Threshold Voltage, VGS(TH)(V) Junction Temperature, TJ (°C) Gate Threshold Varisation with Temperature VGS = VDS ID = 1mA

UNISONIC TECHNOLOGIES CO., LTD 5 of 6 www.unisonic.com.tw QW-R206-037,K „ TYPICAL CHARACTERICS (Cont.) 100750-25 1.1 1.05 -50 0.925 11 . 20.80.4 0.5 0.1 0.05 0.01 0.2 0.005 25 50 150125 0.95 1.025 1.075 1.4 0.001 0.975 0.6 Normalized Drain-Source Breakdown Voltage, BVDSS(V) Junction Temperature, TJ (°C) Breakdown Voltage Varisation with Temperature ID = 250μA Body Diode Forward Voltage, VSD (V) Body Diode Forward Voltage Varisation with Temperature Reverse Drain Current, IS (A) VGS=0V TJ =125°C 25°C Capacitance (pF) Gate-Source Voltage, VGS (V)

UNISONIC TECHNOLOGIES CO., LTD 6 of 6 www.unisonic.com.tw QW-R206-037,K UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.