Download PDF2N7002_09 WEITRON
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http://www.weitron.com.tw 2N7002 Maximum Ratings (TA=25°C Unless Otherwise Specified) Device Marking 2N7002 = 702 Note : Small Signal MOSFET N-Channel GATE SOURCE DRAIN SOT-23 WEITRON Rev.B 08-Jul-09 Rating Symbol Value Unit Drain Source Voltage VDSS 60 V Drain Gate Voltage(RGS = 1.0MΩ) VDGR ID ID IDM VGS VGSM 60 V Drain Current Continuous TC = 25°C (Note 1.) – Con tinuousTC= 100°C (Note 1.) Pulsed (Note2.) mA Gate Source Voltage Con tinuous Non–repe titive (tp≤ 50µs) V V Thermal Characteristics (TA=25°C Unless Otherwise Specified) Characteristic Symbol Max Unit Total Device Dissipation FR–5 Board (Note3.) TA=25°C Derate above 25°C P D PD TJ Tstg 225 1.8 mW mW/°C mW mW/°C RθJA RθJA 556 °C/W Total Device Dissipation Alumina Substrate,(Note4.)TA =25°C Derate above 25°C 300 2.4 Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient 417 °C/W Junction Temperature -55 to +150 -55 to +150 1.The Power Dissipation of thepackage may result in a lower continuous drain current. 2.PulseTest: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%. ±75 ±800 ±20 ±40 ±115 Lead(Pb)-FreeP b Storage Temperature
http://www.weitron.com.tw 2N7002 Rev.B 08-Jul-092/4 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain–Source Breakdown Voltage VGS = 0, ID = 10µA V (BR)DSS 60 – – V Zero Gate Voltage Drain Current TJ = 25 °C VGS = 0, VDS = 6V T J = 125 °C IDSS 1.0 500 µA Gate–Body Leakage Current Forward VGS = 20V IGSSF – – 100 nA Gate–Body Leakage Current, Reverse VGS = –20 V IGSSR – – -100 nA ON CHARACTERISTICS (Note 2.) Gate Threshold Voltage VDS = VGS, ID =250µA V GS(th) 1.0 1.6 2 V On–State Drain Current VDS ≥ 2.0 VDS(on), VGS = 10V ID(on) 500 – – mA Static Drain–Source On–State Voltage VGS = 10 V , ID = 500 mA VGS = 5.0 V , ID = 50 mA V DS(on) – 3.75 0.375 V Static Drain–Source On–State Resistance VGS = 10 V, ID = 500 mA T C = 25 °C T C = 125 °C VGS = 5.0 V, ID = 50 mA T C = 25°C T C = 125 °C rDS(on) 1.4 1.8 7.5 13.5 7.5 13.5 /uni03A9 Forward Transconductance VDS ≥ 2.0 VDS(on) , ID = 200 mA gFS 80 – – mS DYNAMIC CHARACTERISTICS Input Capacitance VDS = 25 V, VGS = 0, f = 1.0 MHz C iss – 17 50 pF Output Capacitance VDS = 25 Vdc, V GS = 0, f = 1.0 MHz C oss – 10 25 pF Reverse Transfer Capacitance VDS = 25 V, VGS = 0, f = 1.0 MHz C rss – 2.5 5.0 pF SWITCHING CHARACTERISTICS (Note 2.) Turn–On Delay Time V DD = 25 V , I D 500 mA , td(on) – 7 20 ns Turn–O Delay Time R G = 25 Ω , R L = 50 Ω , V gen = 10 V td(o ) – 11 40 ns BODY–DRAIN DIODE RATINGS Diode Forward On–Voltage I S = 115 mA , VGS = 0 V V SD – – –1.5 V Source Current Continuous Body Diode IS – – –115 mA Source Current Pulsed ISM – – –800 mA 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.
http://www.weitron.com.tw 2N7002 VGS, GATE SOURCE VOLTAGE (VOLTS) FIG.2 Transfer Characteristics 1.0 0.8 0.6 0.4 0.2 ID , DRAIN CURRENT (AMPS) VDS=10V -55 C 125 C 25 C FIG.1 Ohmic Region VDS, DRAIN SOURSE VOLTAGE (VOLTS) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 TA=25 C VGS=10V ID , DRAIN CURRENT (AMPS) FIG.4 Temperature Versus Gate Threshold Voltage -60 -20 +20 +80 +100 +140 1.2 1.05 1.1 1.10 1.0 0.95 0.9 0.85 0.8 0.8 0.75 0.7 VGS (th), THRESHOLD VOLTAGE (NORMALIZED) VDS = VGS ID = 1.0mA T,TEMPERATURE ( C) FIG.3 Temperature Versus Static Drain-Sourse On-Resistance T,TEMPERATURE ( C) 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 rDS(ON), STATIC DRAIN-SOURSE ON -RESISTANCE (NORMALIZED) VGS = 10V ID=200mA -60 -20 +20 +80 +100 +140 Rev.B 08-Jul-093/4
http://www.weitron.com.tw Dim A B C D E G H J K L M Min 0.35 1.19 2.10 0.85 0.46 1.70 2.70 0.01 0.89 0.30 0.076 Max 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25 A B D E G M L H J TOP VIEW K C SOT-23 SOT-23 Outline Dimension 2N7002 Rev.B 08-Jul-094/4